...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Physical review >Surface organization of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy
【24h】

Surface organization of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy

机译：金属有机气相外延生长同质外延InP薄膜的表面组织

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We present a systematic study of the morphology of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy which are imaged with ex situ atomic force microscopy. These films show a dramatic range of different surface morphologies as a function of the growth conditions and substrate (growth temperature, Ⅴ/Ⅲ ratio, and miscut angle <0.6° and orientation toward A or B sites), ranging from stable step flow to previously unreported strong step bunching, over 10 nm in height. These observations suggest a window of growth parameters for optimal quality epitaxial layers. We also present a theoretical model for these growth modes that takes account of deposition, diffusion, and dissociation of molecular precursors, and the diffusion and step incorporation of atoms released by the precursors. The experimental conditions for step flow and step bunching are reproduced by this model, with the step bunching instability caused by the difference in molecular dissociation from above and below step edges, as was discussed previously for GaAs (001).
机译：我们提出了通过异位原子力显微镜成像的金属有机气相外延生长的同质外延InP膜的形态的系统研究。这些薄膜根据生长条件和基材（生长温度，Ⅴ/Ⅲ比，错切角<0.6°和朝向A或B部位的取向）显示出不同的表面形态，其变化范围很大，从稳定的步进流到先前的未报告的强步聚束，高度超过10 nm。这些观察结果表明最佳质量外延层的生长参数窗口。我们还针对这些生长模式提出了一种理论模型，其中考虑了分子前体的沉积，扩散和解离，以及前体释放的原子的扩散和逐步掺入。该模型再现了台阶流动和台阶聚束的实验条件，并且台阶聚束的不稳定性是由台阶边缘上方和下方的分子解离差异引起的，如先前针对GaAs（001）所述。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号