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Intrinsic domain-wall resistivity in half-metallic manganite thin films

机译：半金属锰矿薄膜的本征畴壁电阻率

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摘要

Deciphering the intrinsic magnetic domain-wall (DW) resistivity of manganite materials by typical low-field magnetoresistance measurement is flawed due to the addition of different galvanomagnetic effects such as, colossal magnetoresistance, Lorentz force magnetoresistance, and anisotropic magnetoresistance (AMR). In this paper, by taking the advantage of rotational anisotropy and the stable rotation of the DW planes in half-metallic manganite La_(0.7)Sr_(0.3)MnO_3 film, we deploy a remanent state resistance measurement technique to exclude all the field-dependent spurious effects from the intrinsic DW resistivity. To further refine its magnitude, we calculate the remanent state DW AMR by exploiting the three-dimensional micromagnetic simulation, which reveals a comparable but opposite contribution to the positive DW resistivity. From these results, we estimate the intrinsic DW resistance-area product in La_(0.7)Sr_(0.3)MnO_3 to be 1.9 × 10~(-15) Ω ? m~2.
机译：由于添加了不同的电磁效应（例如，巨大的磁阻，洛伦兹力磁阻和各向异性磁阻（AMR）），因此通过典型的低场磁阻测量来降低锰材料的本征磁畴壁（DW）电阻率是有缺陷的。本文利用半金属锰矿La_（0.7）Sr_（0.3）MnO_3膜的旋转各向异性和DW平面的稳定旋转的优势，采用剩余态电阻测量技术来排除所有与场有关的DW固有电阻率产生的寄生效应。为了进一步细化其幅度，我们通过利用三维微磁模拟来计算剩余态DW AMR，这显示出对正DW电阻率具有可比但相反的贡献。根据这些结果，我们估计La_（0.7）Sr_（0.3）MnO_3中的本征DW电阻面积乘积为1.9×10〜（-15）Ω？。 m〜2

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  • 来源
    《Physical review》 |2012年第18期|184404.1-184404.5|共5页
  • 作者

    S. R. Bakaul; W. Hu; T. Wu; T. Kimura;

  • 作者单位

    Advanced Electronics Research Division, INAMORl Frontier Research Center, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan,CREST, Japan Science and Technology Agency, Sanbancho, Tokyo 102-0075, Japan;

    Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore;

    Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore;

    Advanced Electronics Research Division, INAMORl Frontier Research Center, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan,CREST, Japan Science and Technology Agency, Sanbancho, Tokyo 102-0075, Japan;

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  • 关键词

    domain walls and domain structure; domain walls and domain structure; magnetic properties of monolayers and thin films; manganites;

    机译：畴壁和畴结构;畴壁和畴结构;单层和薄膜的磁性锰矿;

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