Formation and destabilization of Ga interstitials in GaAsN: Experiment and theory

著录项

• 来源
  《Physical review》 |2012年第19期|195205.1-195205.7|共7页
• 作者

  P. Laukkanen; M. P. J. Punkkinen; J. Puustinen; H. Levaemaeki; M. Tuominen; K. Schulte; J. Dahl; J. Lang; H. L. Zhang; M. Kuzmin; K. Palotas; B. Johansson; L. Vitos; M. Guina; K. Kokko;

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• 作者单位

  Department of Physics and Astronomy, University of Turku, Fl-20014 Turku, Finland;

  Department of Physics and Astronomy, University of Turku, Fl-20014 Turku, Finland,Applied Materials Physics, Department of Materials Science and Engineering, Royal Institute of Technology, SE-10044 Stockholm, Sweden;

  Optoelectronics Research Centre, Tampere University of Technology, FI-33101 Tampere, Finland;

  Department of Physics and Astronomy, University of Turku, Fl-20014 Turku, Finland;

  Department of Physics and Astronomy, University of Turku, Fl-20014 Turku, Finland;

  MAX-lab, Lund University, SE-221 00 Lund, Sweden;

  Department of Physics and Astronomy, University of Turku, Fl-20014 Turku, Finland;

  Department of Physics and Astronomy, University of Turku, Fl-20014 Turku, Finland;

  Applied Materials Physics, Department of Materials Science and Engineering, Royal Institute of Technology, SE-10044 Stockholm, Sweden;

  loffe Physical-Technical Institute of the Russian Academy of Sciences, St. Petersburg 194021, Russian Federation;

  Department of Theoretical Physics, Institute of Physics, Budapest University of Technology and Economics, Budafoki ut. 8, H-1111 Budapest, Hungary;

  Applied Materials Physics, Department of Materials Science and Engineering, Royal Institute of Technology, SE-10044 Stockholm, Sweden,Department of Physics and Astronomy, Division of Materials Theory, Uppsala University, Box 516, SE-751210 Uppsala, Sweden;

  Applied Materials Physics, Department of Materials Science and Engineering, Royal Institute of Technology, SE-10044 Stockholm, Sweden,Department of Physics and Astronomy, Division of Materials Theory, Uppsala University, Box 516, SE-751210 Uppsala, Sweden,Research Institute for Solid State Physics and Optics, Wigner Research Center for Physics, P.O. Box 49, H-1525 Budapest, Hungary;

  Optoelectronics Research Centre, Tampere University of Technology, FI-33101 Tampere, Finland;

  Department of Physics and Astronomy, University of Turku, Fl-20014 Turku, Finland;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  composition, segregation; defects and impurities; Ⅲ-Ⅴ semiconductors; Ⅲ-Ⅴ semiconductors;

  机译：组成;隔离;缺陷和杂质;Ⅲ-Ⅴ族半导体;Ⅲ-Ⅴ族半导体;