Reconfiguration and dissociation of bonded hydrogen in silicon by energetic ions

著录项

• 来源
  《Physical review》 |2011年第4期|p.045204.1-045204.6|共6页
• 作者

  S. V. S. Nageswara Rao; S. K. Dixit; G. Lupke; N. H. Tolk; L. C. Feldman;

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• 作者单位

  Department of Physics, Pondicherry University, Puducherry 605014, India,Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA;

  Interdisciplinary Materials Science Program, Vanderbilt University, Nashville, Tennessee 37235, USA,Vanderbilt Institute of Nanoscale Science and Engineering, Vanderbilt University, Tennessee TN 37235, USA;

  Department of Applied Science, College of William and Mary, Williamsburg, Virginia 23187, USA;

  Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA,Vanderbilt Institute of Nanoscale Science and Engineering, Vanderbilt University, Tennessee TN 37235, USA;

  Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA,Interdisciplinary Materials Science Program, Vanderbilt University, Nashville, Tennessee 37235, USA,Vanderbilt Institute of Nanoscale Science and Engineering, Vanderbilt University, Tennessee TN 37235, USA,Institute for Advanced Materials Devices and Nanotechnology, Rutgers University, Piscataway, NJ 08901;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  semiconductors; metals, semimetals, and alloys; elemental semiconductors;

  机译：半导体;金属;半金属和合金;元素半导体;