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Carrier recombination dynamics in individual CdSe nanowires

机译：单个CdSe纳米线中的载流子复合动力学

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Carrier dynamics in single CdSe nanowires (NWs) have been studied using various techniques. They include measurements of single wire emission intensities as a function of pump fluence, excitation intensity-dependent emission quantum yields, and excited-state lifetimes. Ensemble transient differential absorption studies of induced bleach dynamics have also been conducted. Results of these studies show superlinear growth of the emission intensity as a function of excitation intensity. This is corroborated by single nanowire emission quantum yields that vary as a function of excitation fluence and range from 0.1% to values over 10%. At the same time, measured emission lifetimes are short (<100 ps) while the nanowire band-edge bleach persists for over a nanosecond. To explain all of the abovementioned results, a kinetic model that accounts for both the nature of photogenerated carriers within the wires as well as their subsequent recombination dynamics has been developed.
机译：已经使用各种技术研究了单CdSe纳米线（NWs）中的载流子动力学。它们包括作为泵浦注量，激发强度相关的发射量子产率和激发态寿命的函数的单线发射强度的测量。还进行了诱导漂白动力学的整体瞬态差分吸收研究。这些研究的结果表明，发射强度随激发强度的变化呈超线性增长。单纳米线发射量子产率的确证了这一点，量子产率随激发通量的不同而变化，范围从0.1％到超过10％的值。同时，测得的发射寿命很短（<100 ps），而纳米线带边漂白剂持续了纳秒以上。为了解释所有上述结果，已经开发了一种动力学模型，该动力学模型考虑了导线内光生载流子的性质以及它们随后的重组动力学。

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