Hubbard model description of silicon spin qubits: Charge stability diagram and tunnel coupling in Si double quantum dots

S. Das Sarma; Xin Wang; Shuo Yang

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Hubbard model description of silicon spin qubits: Charge stability diagram and tunnel coupling in Si double quantum dots

机译：硅自旋量子位的Hubbard模型描述：Si双量子点中的电荷稳定性图和隧道耦合

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We apply the recently introduced Hubbard model approach to quantitatively describe the experimental charge stability diagram and tunnel coupling of silicon double quantum dot systems. The results calculated from both the generalized Hubbard model and the microscopic theory are compared with existing experimental data, and excellent agreement between theory and experiment is found. The central approximation of our theory is a reduction of the full multielectron multiband system to an effective two-electron model, which is numerically tractable. In the microscopic theory we utilize the Hund-Mulliken approximation to the electron wave functions and compare the results calculated with two different forms of confinement potentials (biquadratic and Gaussian). We discuss the implications of our work for future studies.

机译：我们应用最近引入的Hubbard模型方法来定量描述硅双量子点系统的实验电荷稳定性图和隧道耦合。从广义哈伯德模型和微观理论计算的结果与现有的实验数据进行了比较，发现理论和实验之间有很好的一致性。我们理论的中心近似是将完整的多电子多带系统简化为有效的双电子模型，该模型在数值上易于处理。在微观理论中，我们将Hund-Mulliken逼近应用于电子波函数，并比较两种不同形式的约束势（双二次和高斯）的计算结果。我们讨论了我们的工作对未来研究的意义。

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来源
《Physical review》 |2011年第23期|p.235314.1-235314.11|共11页
作者
S. Das Sarma; Xin Wang; Shuo Yang;
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作者单位

Condensed Matter Theory Center, Department of Physics, University of Maryland, College Park, Maryland 20742, USA;

Condensed Matter Theory Center, Department of Physics, University of Maryland, College Park, Maryland 20742, USA;

Condensed Matter Theory Center, Department of Physics, University of Maryland, College Park, Maryland 20742, USA;

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正文语种 eng
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quantum dots; quantum computation; theories and models of many-electron systems; coulomb blockade; single-electron tunneling;

机译：量子点;量子计算多电子系统的理论和模型;库仑封锁;单电子隧穿;

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1. Generic Hubbard model description of semiconductor quantum-dot spin qubits [J] . Shuo Yang, Xin Wang, S. Das Sarma Physical review . 2011,第16期

机译：半导体量子点自旋量子位的通用Hubbard模型描述
2. Non-equilibrium charge stability diagrams of a silicon double quantum dot [J] . M. G. House, H. Pan, M. Xiao, Applied Physics Letters . 2011,第11期

机译：硅双量子点的非平衡电荷稳定性图
3. Photon- and phonon-assisted tunneling in the three-dimensional charge stability diagram of a triple quantum dot array [J] . Floris R. Braakman, Pierre Barthelemy, Christian Reichl, Applied Physics Letters . 2013,第11期

机译：三重量子点阵列的三维电荷稳定性图中的光子和声子辅助隧穿
4. CONTROLLED POLARISATION OF SILICON ISOLATED DOUBLE QUANTUM DOTS WITH REMOTE CHARGE SENSING FOR QUBIT USE [C] . M. G. TANNER, G. PODD, P. CHAPMAN, International Symposium on Foundations of Quantum Mechanics in the Light of New Technology . 2009

机译：硅隔离双量子点的控制极化，具有远程充电检测的QUBit使用
5. Spin and Charge Qubits in SiliconSilicon Germanium Quantum dots. [D] . Shi, Zhan. 2013

机译：硅锗锗量子点中的自旋和电荷量子位。
6. Scalable quantum computing based on stationary spin qubits in coupled quantum dots inside double-sided optical microcavities [O] . Hai-Rui Wei, Fu-Guo Deng -1

机译：基于双面光微腔内耦合量子点中静态自旋量子位的可扩展量子计算
7. Hubbard model description of silicon spin qubits: charge stability diagram and tunnel coupling in Si double quantum dots [O] . Sarma, S. Das, Wang, Xin, Yang, Shuo 2011

机译：Hubbard模型描述硅自旋量子位：电荷稳定性 si双量子点中的图和隧道耦合

Hubbard model description of silicon spin qubits: Charge stability diagram and tunnel coupling in Si double quantum dots

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