Anomalously strong pinning of the filling factor v = 2 in epitaxial graphene

T. J. B. M. Janssen; A. Tzalenchuk; R. Yakimova; S. Kubatkin; S. Lara-Avila; S. Kopylov; V. I. Falko

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Anomalously strong pinning of the filling factor v = 2 in epitaxial graphene

机译：外延石墨烯中填充因子v = 2的异常强钉扎

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We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and graphene is such that Landau levels (in particular, the one at exactly zero energy) remain completely filled over an extraordinarily broad range of magnetic fields. One important implication of this pinning of the filling factor is that the system can sustain a very high nondissipative current. This makes epitaxial graphene ideally suited for quantum resistance metrology, and we have achieved a precision of 3 parts in 1010 in the Hall resistance-quantization measurements.

机译：我们探索了在硅封端的SiC上生长的外延石墨烯中霍尔电阻的稳健量化。对于该系统而言，独特的是，在基板和石墨烯之间的电荷转移中，量子相对于经典电容的优势是，使得Landau能级（特别是能量恰好为零的能级）在非常宽的磁场范围内保持完全填充。固定填充因子的一个重要含义是系统可以承受很高的非耗散电流。这使得外延石墨烯非常适合量子电阻计量，并且在霍尔电阻量化测量中，我们在1010中获得了3精度。

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来源
《Physical review》 |2011年第23期|p.233402.1-233402.4|共4页
作者
T. J. B. M. Janssen; A. Tzalenchuk; R. Yakimova; S. Kubatkin; S. Lara-Avila; S. Kopylov; V. I. Falko;
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作者单位

National Physical Laboratory, Hampton Road, Teddington, TW11 OLW, United Kingdom;

National Physical Laboratory, Hampton Road, Teddington, TW11 OLW, United Kingdom;

Department of Physics, Chemistry and Biology (IFM), Linkoping University, S-581 83 Linkoping, Sweden;

Department of Microtechnology and Nanoscience, Chalmers University of Technology, S-4J2 96 Gotenborg, Sweden;

Department of Microtechnology and Nanoscience, Chalmers University of Technology, S-4J2 96 Gotenborg, Sweden;

Physics Department, Lancaster University, Lancaster LAI 4YB, United Kingdom;

Physics Department, Lancaster University, Lancaster LAI 4YB, United Kingdom;

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正文语种 eng
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关键词
quantum hall effects;

机译：量子霍尔效应;

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4. Screening, Exchange, And Correlations In Quantum WiresIn Strong Magnetic Fields: Filling Factor Dependence AndInhomogeneous g Factor [C] . Z. Zhang, P. Vasilopoulos International conference on the physics of semiconductors;ICPS . 2002

机译：量子线在强磁场中的屏蔽，交换和相关性：填充因子依赖性和非均匀g因子
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6. Observation of resistively detected hole spin resonance and zero-field pseudo-spin splitting in epitaxial graphene [O] . Ramesh G. Mani, John Hankinson, Claire Berger, -1

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7. Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene [O] . Janssen, T J B M, Tzalenchuk, A, Yakimova, Rositsa, 2011

机译：外延石墨烯中填充因子nu = 2的异常强钉扎

Anomalously strong pinning of the filling factor v = 2 in epitaxial graphene

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