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首页> 外文期刊>Physical review >Anisotropic magnetotransport in SrTiO_3 surface electron gases generated by Ar~+ irradiation
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Anisotropic magnetotransport in SrTiO_3 surface electron gases generated by Ar~+ irradiation

机译：Ar〜+辐照在SrTiO_3表面电子气中的各向异性磁输运

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摘要

Metallic surface layers are fabricated by doping (100) SrTiOj (STO) single crystals with oxygen vacancies generated by bombardment with Ar ions from an rf plasma source. The presence of oxygen vacancies is confirmed by cathodoluminescence and x-ray photoemission spectroscopy. This technique produces a surface electron gas with high values of the sheet carrier density (N_(2d) = 2.45x 10~(17) cm~(-2)). A strong increase (300%) of the low-temperature magnetoresistance is observed when the magnetic field is rotated away from the surface, characteristic of orbital effects of confined electrons. We estimate the width of the confinement region to be in the 200-300 nm range. When a magnetic field is applied in the surface plane and parallel to the current direction, a large negative magnetoresistance is found below the structural transition of the STO, which is discussed in terms of spin-orbit scattering. On further reduction of temperature, there is a change to a positive magnetoresistance regime due to the scattering of charge carriers at the disordered surface region.
机译：金属表面层是通过向（100）SrTiOj（STO）单晶中掺杂氧空位而制成的，该氧空位是由来自RF等离子体源的Ar离子轰击产生的。氧空位的存在通过阴极发光和X射线光发射光谱法确认。该技术产生具有高的片载流子密度值的表面电子气（N_（2d）= 2.45x 10〜（17）cm〜（-2））。当磁场远离表面旋转时，观察到低温磁阻的强烈增加（300％），这是受限电子的轨道效应的特征。我们估计限制区域的宽度在200-300 nm范围内。当在表面平面中且平行于电流方向施加磁场时，在STO的结构转变下会发现较大的负磁阻，这将在自旋轨道散射方面进行讨论。随着温度的进一步降低，由于载流子在无序表面区域的散射，正磁阻状态发生了变化。

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  • 来源
    《Physical review》 |2011年第24期|p.245120.1-245120.8|共8页
  • 作者

    F. Y. Bruno; J. Tornos; M. Gutierrez del Olmo; G. Sanchez Santolino; N. M. Nemes; M. Garcia-Hernandez; B. Mendez; J. Piqueras; G. Antorrena; L. Morellon; J. M. De Teresa; M. Clement; E. Iborra; C. Leon; J. Santamaria;

  • 作者单位

    GFMC, DepartamentB.83 Fisica Aplicada III, Universidad CB.83mplutense de Madrid, E-28040 Madrid, Spain;

    GFMC, DepartamentB.83 Fisica Aplicada III, Universidad CB.83mplutense de Madrid, E-28040 Madrid, Spain;

    GFMC, DepartamentB.83 Fisica Aplicada III, Universidad CB.83mplutense de Madrid, E-28040 Madrid, Spain;

    GFMC, DepartamentB.83 Fisica Aplicada III, Universidad CB.83mplutense de Madrid, E-28040 Madrid, Spain;

    GFMC, DepartamentB.83 Fisica Aplicada III, Universidad CB.83mplutense de Madrid, E-28040 Madrid, Spain;

    Instituu> de Ciencia de Materiales de Madrid, CB.83nsejB.83 SuperiB.83r de InvestigaciB.83nes Cientificas, E-28049 CantB.83blancB.83, Spain;

    DepartamentB.83 Fisica de Materiales, Universidad CB.83mplutense de Madrid, E-28040 Madrid, Spain;

    DepartamentB.83 Fisica de Materiales, Universidad CB.83mplutense de Madrid, E-28040 Madrid, Spain;

    Institute de NanB.83ciencia de AragB.83n (INA), Universidad de ZaragB.83za, ZaragB.83za E-50018, Spain;

    Institute de NanB.83ciencia de AragB.83n (INA), Universidad de ZaragB.83za, ZaragB.83za E-50018, Spain,Institute) de Ciencia de Materiales de AragB.83n (ICMA), Universidad de ZaragB.83za-CSIC, ZaragB.83za E-50009, Spain;

    Institute) de Ciencia de Materiales de AragB.83n (ICMA), Universidad de ZaragB.83za-CSIC, ZaragB.83za E-50009, Spain,DepartamentB.83 de Fisica de la Materia CB.83ndensada, Universidad de ZaragB.83za, ZaragB.83za E-50009, Spain;

    ETSIT Universidad PB.83litecnica de Madrid, E-28040 Madrid, Spain;

    ETSIT Universidad PB.83litecnica de Madrid, E-28040 Madrid, Spain;

    GFMC, DepartamentB.83 Fisica Aplicada III, Universidad CB.83mplutense de Madrid, E-28040 Madrid, Spain;

    GFMC, DepartamentB.83 Fisica Aplicada III, Universidad CB.83mplutense de Madrid, E-28040 Madrid, Spain;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    electron gas, fermi gas; oxide surfaces;

    机译：电子气;费米气氧化物表面;

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