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Single-shot measurement and tunnel-rate spectroscopy of a Si/SiGe few-electron quantum dot

机译:Si / SiGe少数电子量子点的单次测量和隧道速率光谱

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摘要

We investigate the tunnel rates and energies of excited states of small numbers of electrons in a quantum dot fabricated in a Si/SiGe heterostructure. Tunnel rates for loading and unloading electrons are found to be strongly energy dependent, and they vary significantly between different excited states. We show that this phenomenon enables charge sensing measurements of the average electron occupation that are analogous to Coulomb diamonds. Excited-state energies can be read directly from the plot, and we develop a rate model that enables a quantitative understanding of the relative sizes of different electron tunnel rates.
机译:我们研究了在Si / SiGe异质结构中制造的量子点中少量电子的激发态的隧穿速率和能量。发现装载和卸载电子的隧穿速率与能量密切相关,并且在不同的激发态之间,它们的显着不同。我们表明,这种现象可以使电荷平均的电子吸收测量值类似于库仑钻石。可以从图中直接读取激发态能量,我们开发了一个速率模型,可以定量地了解不同电子隧穿速率的相对大小。

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