Electron localization in metal-decorated graphene

著录项

• 来源
  《Physical review》 |2011年第4期|p.045431.1-045431.8|共8页
• 作者

  Wei Li; Yuheng He; Lin Wang; Guohui Ding; Zhao-Qing Zhang; Rolf W. Lortz; Ping Sheng; Ning Wang;

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• 作者单位

  William Mong Institute of Nano Science and Technology, Hong Kong University of Science and Technology, Hong Kong, China;

  Department of Physics, Hong Kong University of Science and Technology, Hong Kong, China,;

  Department of Physics, Hong Kong University of Science and Technology, Hong Kong, China,;

  Department of Physics, Shanghai Jiaotong University, Shanghai, China;

  Department of Physics, Hong Kong University of Science and Technology, Hong Kong, China,;

  William Mong Institute of Nano Science and Technology, Hong Kong University of Science and Technology, Hong Kong, China,Department of Physics, Hong Kong University of Science and Technology, Hong Kong, China,;

  William Mong Institute of Nano Science and Technology, Hong Kong University of Science and Technology, Hong Kong, China,Department of Physics, Hong Kong University of Science and Technology, Hong Kong, China,;

  William Mong Institute of Nano Science and Technology, Hong Kong University of Science and Technology, Hong Kong, China,Department of Physics, Hong Kong University of Science and Technology, Hong Kong, China;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  weak or anderson localization;

  机译：弱或安德森本地化;