Vertical field-effect transistor based on wave-function extension

著录项

• 来源
  《Physical review》 |2011年第8期|p.085301.1-085301.5|共5页
• 作者

  A. Sciambi; M. Pelliccione; M. P. Lilly; S. R. Bank; A. C. Gossard; L. N. Pfeiffer; K. W. West; D. Goldhaber-Gordon;

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• 作者单位

  Department ofApplied Physics, Stanford University, Stanford, California 94305-4045, USA,SIMES, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA;

  Department ofApplied Physics, Stanford University, Stanford, California 94305-4045, USA,SIMES, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA;

  Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185, USA;

  Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA,Electrical and Computer Engineering Department, University of Texas at Austin, Austin, Texas 78758, USA;

  Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA;

  Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA;

  Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA;

  SIMES, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA,Department of Physics, Stanford University, Stanford, California 94305-4045, USA;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  tunneling; quantum wells;

  机译：隧道量子阱;