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首页> 外文期刊>Physical review >Enhancement of excitonic emission in semiconductor heterostructures due to resonant coupling to multipole plasmon modes in a gold particle
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Enhancement of excitonic emission in semiconductor heterostructures due to resonant coupling to multipole plasmon modes in a gold particle

机译：由于共振耦合到金粒子中的多极等离子体激元模式，半导体异质结构中的激子发射增强。

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摘要

We apply an exact electrodynamic theory to analyze experimental data on the emission enhancement in epitaxial semiconductor structures, induced by resonant interaction of emitting excitons with plasmons localized in a gold nanoparticle. Near-field scanning optical microscopy was employed to investigate the effect of the old particle positioned near the surface of a rough InGaN film or a CdSe/ZnSe quantum dot heterostructure fabricated by molecular-beam epitaxy. It is shown that the frequently used quasistatic approximation is unable to explain the experimental data due to the inability to take into consideration the contribution of higher-order multipole plasmon resonances. In particular, it follows from the performed calculations that the observed effect of the emission enhancement owes mainly to the resonant interaction with the quadrupole and octupole plasmon modes in the spherical gold particle. The design of optimized metal-semiconductor structures is proposed.
机译：我们应用精确的电动力学理论来分析外延半导体结构中发射增强的实验数据，该发射增强是由发射激子与位于金纳米粒子中的等离激元的共振相互作用引起的。使用近场扫描光学显微镜研究位于分子束外延制造的粗糙InGaN膜或CdSe / ZnSe量子点异质结构表面附近的旧粒子的影响。结果表明，由于无法考虑高阶多极等离子体激元共振的贡献，常用的准静态逼近无法解释实验数据。特别地，从执行的计算得出，观察到的发射增强的效果主要归因于与球形金颗粒中的四极和八极等离子体激元模的共振相互作用。提出了优化的金属半导体结构设计。

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  • 来源
    《Physical review》 |2011年第8期|p.085323.1-085323.9|共9页
  • 作者

    A. A. Toropov; T. V. Shubina; K. G. Belyaev; S. V. Ivanov; P. S. Kopev; Y. Ogawa; F. Minami;

  • 作者单位

    Ioffe Physical-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26,194021 St. Petersburg, Russia;

    Ioffe Physical-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26,194021 St. Petersburg, Russia;

    Ioffe Physical-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26,194021 St. Petersburg, Russia;

    Ioffe Physical-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26,194021 St. Petersburg, Russia;

    Ioffe Physical-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26,194021 St. Petersburg, Russia;

    Department of Physics, Tokyo Institute of Technology, Meguro, Tokyo 152-8551, Japan;

    Department of Physics, Tokyo Institute of Technology, Meguro, Tokyo 152-8551, Japan;

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  • 关键词

    collective excitations; quantum dots; Ⅲ-Ⅴ semiconductors;

    机译：集体激发;量子点;Ⅲ-Ⅴ族半导体;

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