Microscopic model for the ferroelectric field effect in oxide heterostructures

著录项

• 来源
  《Physical review》 |2011年第15期|p.155117.1-155117.8|共8页
• 作者

  Shuai Dong; Xiaotian Zhang; Rong Yu; J.-M. Liu; Elbio Dagotto;

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• 作者单位

  Department of Physics, Southeast University, Nanjing 211189, China,National Laboratory of Solid State Micro structures, Nanjing University, Nanjing 210093, China;

  Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA,Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA;

  Department of Physics and Astronomy, Rice University, Houston, Texas 77005, USA;

  National Laboratory of Solid State Micro structures, Nanjing University, Nanjing 210093, China,International Center for Materials Physics, Chinese Academy of Sciences, Shenyang 110016, China;

  Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA,Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  field effect devices; manganites; ferroelectricity and antiferroelectricity; spin polarized field effect transistors;

  机译：场效应器件;锰矿;铁电和反铁电自旋极化场效应晶体管;