Temperature-insensitive optical alignment of the exciton in nanowire-embedded GaN quantum dots

A. Balocchi; J. Renard; C. T. Nguyen; B. Gayral; T. Amand; H. Mariette; B. Daudin; G. Tourbot; X. Marie

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Temperature-insensitive optical alignment of the exciton in nanowire-embedded GaN quantum dots

机译：嵌入纳米线的GaN量子点中激子的温度不敏感光学对准

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We report on the exciton spin dynamics of nanowire-embedded GaN/AIN quantum dots (QDs) investigated by time-resolved photoluminescence spectroscopy. Under a linearly polarized quasiresonant excitation, we evidence the quenching of the exciton spin relaxation and a temperature-insensitive degree of the exciton linear polarization, demonstrating the robustness of the optical alignment of the exciton spin in these nanowire-embedded QDs. A detailed examination of the luminescence polarization angular dependence shows orthogonal linear exciton eigenstates.

机译：我们报告了时间分辨光致发光光谱研究的纳米线嵌入式GaN / AIN量子点（QDs）的激子自旋动力学。在线性极化的准谐振子激发下，我们证明了激子自旋弛豫的猝灭和激子线性极化的温度不敏感度，证明了这些纳米线嵌入的量子点中激子自旋的光学取向的鲁棒性。对发光偏振角依赖性的详细检查显示出正交线性激子本征态。

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来源
《Physical review》 |2011年第23期|p.235310.1-235310.6|共6页
作者
A. Balocchi; J. Renard; C. T. Nguyen; B. Gayral; T. Amand; H. Mariette; B. Daudin; G. Tourbot; X. Marie;
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作者单位

Universite de Toulouse, INSA-CNRS-UPS, LPCNO, 135 avenue de Rangueil, F-31077 Toulouse, France;

Department of Physics and Astronomy, University of British Columbia, Vancouver, British Columbia, Canada V6T 1Z4,CEA-CNRS group "Nanophysique et semiconducteurs,"CEA-Grenoble, INAC-SP2M and CNRS-Institut Neel, rue des martyrs, F-38054 Grenoble, France;

Universite de Toulouse, INSA-CNRS-UPS, LPCNO, 135 avenue de Rangueil, F-31077 Toulouse, France;

CEA-CNRS group "Nanophysique et semiconducteurs,"CEA-Grenoble, INAC-SP2M and CNRS-Institut Neel, rue des martyrs, F-38054 Grenoble, France;

Universite de Toulouse, INSA-CNRS-UPS, LPCNO, 135 avenue de Rangueil, F-31077 Toulouse, France;

CEA-CNRS group "Nanophysique et semiconducteurs,"CEA-Grenoble, INAC-SP2M and CNRS-Institut Neel, rue des martyrs, F-38054 Grenoble, France;

CEA-CNRS group "Nanophysique et semiconducteurs,"CEA-Grenoble, INAC-SP2M and CNRS-Institut Neel, rue des martyrs, F-38054 Grenoble, France;

CEA-CNRS group "Nanophysique et semiconducteurs,"CEA-Grenoble, INAC-SP2M and CNRS-Institut Neel, rue des martyrs, F-38054 Grenoble, France,CEA-LETI Minatec, 17 rue des martyrs, F-38054 Grenoble, France;

Universite de Toulouse, INSA-CNRS-UPS, LPCNO, 135 avenue de Rangueil, F-31077 Toulouse, France;

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optical creation of spin polarized carriers; quantum dots; Ⅲ-Ⅴ semiconductors;

机译：自旋极化载体的光学产生;量子点;Ⅲ-Ⅴ族半导体;

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机译：Ⅰ型能带对准的直接和间接带隙（In，Al）As / AlAs量子点中激子的光学取向和对准
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6. Study on spin and optical polarization in a coupled InGaN/GaN quantum well and quantum dots structure [O] . Jiadong Yu, Lai Wang, Di Yang, -1

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7. Temperature insensitive optical alignment of the exciton in nanowire embedded GaN Quantum Dots [O] . Balocchi, A., Renard, J., Nguyen, C. T., 2011

机译：纳米线中激子的温度不敏感光学排列嵌入式GaN量子点

Temperature-insensitive optical alignment of the exciton in nanowire-embedded GaN quantum dots

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