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首页> 外文期刊>Physical review >Epitaxial growth and electrical transport properties of Cr_2GeC thin films
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Epitaxial growth and electrical transport properties of Cr_2GeC thin films

机译：Cr_2GeC薄膜的外延生长和电传输性质

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摘要

Cr_2GeC thin films were grown by magnetron sputtering from elemental targets. Phase-pure Cr2GeC was grown directly onto Al_2O_3(0001) at temperatures of 700-800 ℃. These films have an epitaxial component with the well-known epitaxial relationship Cr_2GeC(0001)//Al_2O_3(0001) and Cr_2GeC(1120)//Al_2O_3(1100) or Cr_2GeC(1120)//Al_2O_3(1210). There is also a large secondary grain population with (1013) orientation. Deposition onto Al2O3(0001) with a TiN(111) seed layer and onto MgO(111) yielded growth of globally epitaxial Cr_2GeC(0001) with a virtually negligible (1013) contribution. In contrast to the films deposited at 700-800 ℃, the ones grown at 500-600 ℃ are polycrystalline Cr_2GeC with (1010)-dominated orientation; they also exhibit surface segregations of Ge as a consequence of fast Ge diffusion rates along the basal planes. The room-temperature resistivity of our samples is 53-66 μΩcm. Temperature-dependent resistivity measurements from 15-295 K show that electron-phonon coupling is important and likely anisotropic, which emphasizes that the electrical transport properties cannot be understood in terms of ground state electronic structure calculations only.
机译：通过磁控溅射从元素靶材生长Cr_2GeC薄膜。纯相Cr2GeC在700-800℃的温度下直接生长在Al_2O_3（0001）上。这些膜具有具有众所周知的外延关系Cr_2GeC（0001）// Al_2O_3（0001）和Cr_2GeC（1120）// Al_2O_3（1100）或Cr_2GeC（1120）// Al_2O_3（1210）的外延成分。也有大量具有（1013）取向的次生谷物种群。沉积到具有TiN（111）种子层的Al2O3（0001）上和MgO（111）上，产生了全球外延Cr_2GeC（0001）的生长，而其贡献几乎可以忽略不计（1013）。与在700-800℃下沉积的薄膜相反，在500-600℃下生长的薄膜是具有（1010）为主取向的多晶Cr_2GeC。由于Ge沿基面快速扩散，它们还表现出Ge的表面偏析。我们样品的室温电阻率为53-66μΩcm。从15-295 K的随温度变化的电阻率测量结果表明，电子-声子耦合很重要，并且可能是各向异性的，这强调了电输运特性仅凭基态电子结构计算无法理解。

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  • 来源
    《Physical review》 |2011年第7ptab期|p.075424.1-075424.9|共9页
  • 作者

    Per Eklund; Matthieu Bugnet; Vincent Mauchamp; Sylvain Dubois; Christophe Tromas; Jens Jensen; Luc Piraux; Loiek Gence; Michel Jaouen; Thierry Cabioch;

  • 作者单位

    Institut Pprime, UPR 3346, Universite de Poitiers, SP2MI-Boulevard 3, Teleport 2-BP 30179, 86962 Futuroscope Chasseneuil Cedex, France,Thin Film Physics Division, Linkoping University, IFM, 581 83 Linkdping, Sweden;

    Institut Pprime, UPR 3346, Universite de Poitiers, SP2MI-Boulevard 3, Teleport 2-BP 30179, 86962 Futuroscope Chasseneuil Cedex, France;

    Institut Pprime, UPR 3346, Universite de Poitiers, SP2MI-Boulevard 3, Teleport 2-BP 30179, 86962 Futuroscope Chasseneuil Cedex, France;

    Institut Pprime, UPR 3346, Universite de Poitiers, SP2MI-Boulevard 3, Teleport 2-BP 30179, 86962 Futuroscope Chasseneuil Cedex, France;

    Institut Pprime, UPR 3346, Universite de Poitiers, SP2MI-Boulevard 3, Teleport 2-BP 30179, 86962 Futuroscope Chasseneuil Cedex, France;

    Thin Film Physics Division, Linkoping University, IFM, 581 83 Linkdping, Sweden;

    Institute of Condensed Matter and Nanosciences, Universite Catholique de Louvain, B-1348 Louvain la Neuve, Belgium;

    Institute of Condensed Matter and Nanosciences, Universite Catholique de Louvain, B-1348 Louvain la Neuve, Belgium;

    Institut Pprime, UPR 3346, Universite de Poitiers, SP2MI-Boulevard 3, Teleport 2-BP 30179, 86962 Futuroscope Chasseneuil Cedex, France;

    Institut Pprime, UPR 3346, Universite de Poitiers, SP2MI-Boulevard 3, Teleport 2-BP 30179, 86962 Futuroscope Chasseneuil Cedex, France;

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  • 关键词

    electrical and thermal conduction in crystalline metals and alloys; deposition by sputtering;

    机译：晶体金属和合金中的导电和导热;通过溅射沉积;

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