Role of carbon surface diffusion on the growth of epitaxial graphene on SiC

Taisuke Ohta; N. C. Bartelt; Shu Nie; Konrad Thuermer; G. L. Kellogg

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Role of carbon surface diffusion on the growth of epitaxial graphene on SiC

机译：碳表面扩散对SiC上外延石墨烯生长的作用

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We have observed the formation of graphene on SiC by Si sublimation in an Ar atmosphere using low-energy electron microscopy, scanning tunneling microcopy, and atomic force microscopy. This work reveals unanticipated growth mechanisms, which depend strongly on the initial surface morphology. Carbon diffusion governs the spatial relationship between SiC decomposition and graphene growth. Isolated bilayer SiC steps generate narrow ribbons of graphene by a distinctive cooperative process, whereas triple bilayer steps allow large graphene sheets to grow by step flow. We demonstrate how graphene quality can be improved by controlling the initial surface morphology to avoid the instabilities inherent in diffusion-limited growth.

机译：我们已经使用低能电子显微镜，扫描隧道显微镜和原子力显微镜在Ar气氛中通过Si升华在SiC上观察到石墨烯的形成。这项工作揭示了意想不到的生长机制，这在很大程度上取决于初始的表面形态。碳扩散控制着SiC分解与石墨烯生长之间的空间关系。孤立的双层SiC台阶通过独特的协作过程生成窄的石墨烯带，而三层双层台阶则允许大型石墨烯片材通过台阶流生长。我们演示了如何通过控制初始表面形态来避免扩散受限的生长所固有的不稳定性来改善石墨烯的质量。

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来源
《Physical review》 |2010年第12期|p.121411.1-121411.4|共4页
作者
Taisuke Ohta; N. C. Bartelt; Shu Nie; Konrad Thuermer; G. L. Kellogg;
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作者单位

Sandia National Laboratories, Albuquerque, New Mexico 87185, USA Sandia National Laboratories, Livermore, California 94550, USA;

rnSandia National Laboratories, Albuquerque, New Mexico 87185, USA Sandia National Laboratories, Livermore, California 94550, USA;

rnSandia National Laboratories, Albuquerque, New Mexico 87185, USA Sandia National Laboratories, Livermore, California 94550, USA;

rnSandia National Laboratories, Albuquerque, New Mexico 87185, USA Sandia National Laboratories, Livermore, California 94550, USA;

rnSandia National Laboratories, Albuquerque, New Mexico 87185, USA Sandia National Laboratories, Livermore, California 94550, USA;

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thin film structure and morphology; diffusion; interface formation; microscopy of surfaces, interfaces, and thin films;

机译：薄膜的结构和形态;扩散;界面形成;表面;界面和薄膜的显微镜检查;

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机译：外延石墨烯生长的早期阶段，Si去除的3C-SiC（111）表面上碳原子的原子行为
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4. Growth and Characterization of Epitaxial Graphene on SiC induced by Carbon Evaporation [C] . Ameer Al-Temimy, Christian Riedl, Ulrich Starke Silicon carbide and related materials 2009 . 2010

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5. Growth of Epitaxial Graphene on Single Crystal Copper Surfaces by Chemical Vapor Deposition [D] . Mowll, Tyler Rutley. 2018

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6. SiC surface orientation and Si loss rate effects on epitaxial graphene [O] . Moonkyung Kim, Jeonghyun Hwang, Virgil B Shields, 2012

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7. Understanding the STM images of epitaxial graphene on a reconstructed 6H-SiC(0001) surface: the role of tip-induced mechanical distortion of graphene [O] . Thoyer, François, Lubin, Christophe, Cousty, Jacques, 2016

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Role of carbon surface diffusion on the growth of epitaxial graphene on SiC

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