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首页> 外文期刊>Physical review >Surface core-level shifts on clean Si(001) and Ge(001) studied with photoelectron spectroscopy and density functional theory calculations
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Surface core-level shifts on clean Si(001) and Ge(001) studied with photoelectron spectroscopy and density functional theory calculations

机译:用光电子能谱和密度泛函理论计算研究了清洁Si(001)和Ge(001)上的表面核能级移动

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摘要

The Si 2p and Ge 3d core levels are investigated on the c(4×2) reconstructed surfaces of Si(001) and Ge(001), respectively. Calculated surface core-level shifts are obtained both with and without final state effects included. Significant core-level shifts are found within the four outermost atomic layers. A combination of the theoretical results and high-resolution photoemission data facilitates a detailed assignment of the atomic origins of the various components identified in the core-level spectra of both Si(001) and Ge(001).
机译:在Si(001)和Ge(001)的c(4×2)重构表面上分别研究了Si 2p和Ge 3d核心能级。在包含和不包含最终状态影响的情况下,都可以获取计算出的表面核能级位移。在四个最外层的原子层中发现了明显的核能级移动。理论结果和高分辨率光发射数据的组合有助于对Si(001)和Ge(001)的核能级谱中确定的各种组分的原子起源进行详细分配。

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