Giant oscillations in spin-dependent tunneling resistances as a function of barrier thickness in fully epitaxial magnetic tunnel junctions with a MgO barrier

著录项

• 来源
  《Physical review》 |2010年第13期|134432.1-134432.5|共5页
• 作者

  Takao Marukame; Takayuki Ishikawa; Tomoyuki Taira; Ken-ichi Matsuda; Tetsuya Uemura; Masafumi Yamamoto;

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• 作者单位

  Division of Electronics for Informatics, Hokkaido University, Sapporo 060-0814, Japan Corporate R&D Center, Toshiba Corp., Kawasaki 212-8582, Japan;

  rnDivision of Electronics for Informatics, Hokkaido University, Sapporo 060-0814, Japan;

  rnDivision of Electronics for Informatics, Hokkaido University, Sapporo 060-0814, Japan;

  rnDivision of Electronics for Informatics, Hokkaido University, Sapporo 060-0814, Japan;

  rnDivision of Electronics for Informatics, Hokkaido University, Sapporo 060-0814, Japan;

  rnDivision of Electronics for Informatics, Hokkaido University, Sapporo 060-0814, Japan;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  spin polarized transport; tunneling; other ferromagnetic metals and alloys; magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields;

  机译：自旋极化传输;隧道其他铁磁金属和合金;磁电子学自旋电子学：利用自旋极化传输或集成磁场的设备;