Time-dependent model for diluted magnetic semiconductors including band structure and confinement effects

O. Morandi; P.-A. Hervieux; G. Manfredi

首页> 外文期刊>Physical review >Time-dependent model for diluted magnetic semiconductors including band structure and confinement effects

【24h】

Time-dependent model for diluted magnetic semiconductors including band structure and confinement effects

机译：含带结构和约束效应的稀磁半导体的时变模型

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

A free-parameter theoretical model is developed in order to study the ultrafast dynamics in confined diluted magnetic semiconductors induced by laser. The hole-spin relaxation process is due to the Elliot-Yafet mechanism, which involves the scattering of the holes on the localized magnetic impurities. The role played by the quantum confinement and the band structure is analyzed. It is shown that the sample thickness and the background hole density strongly influences the phenomenon of demagnetization. Quantitative results are given for III-V ferromagnetic GaMnAs quantum wells of thickness 4 and 6 nm.

机译：为了研究激光诱导的受限稀磁半导体中的超快动力学，建立了一个自由参数理论模型。空穴自旋弛豫过程归因于Elliot-Yafet机理，该机理涉及空穴在局部磁性杂质上的散射。分析了量子限制和能带结构的作用。结果表明，样品厚度和背景孔密度强烈影响退磁现象。给出了厚度为4和6 nm的III-V型铁磁GaMnAs量子阱的定量结果。

著录项

来源
《Physical review》 |2010年第15期|155309.1-155309.10|共10页
作者
O. Morandi; P.-A. Hervieux; G. Manfredi;
展开▼
作者单位

INRIA Nancy Grand-Est and Institut de Recherche en Mathematiques Avancees, 7 rue Rene Descartes, F-67084 Strasbourg, France Institut de Physique et Chimie des Materiaux de Strasbourg, UMR 7504, CNRS, Universite de Strasbourg, BP 43, 23 rue du Loess, 67034 Strasbourg Cedex 02, France;

Institut de Physique et Chimie des Materiaux de Strasbourg, UMR 7504, CNRS, Universite de Strasbourg, BP 43, 23 rue du Loess, 67034 Strasbourg Cedex 02, France;

rnInstitut de Physique et Chimie des Materiaux de Strasbourg, UMR 7504, CNRS, Universite de Strasbourg, BP 43, 23 rue du Loess, 67034 Strasbourg Cedex 02, France;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词
magnetooptical effects; Ⅲ-Ⅴ and Ⅱ-Ⅵ semiconductors;

机译：磁光效应;Ⅲ-Ⅴ和Ⅱ-Ⅵ族半导体;

相似文献

外文文献
中文文献
专利

1. Response properties of III-V dilute magnetic semiconductors including disorder, dynamical electron-electron interactions, and band structure effects [J] . F. V. Kyrychenko, C. A. Ullrich Physical review . 2011,第20期

机译：III-V稀磁半导体的响应特性包括无序，动态电子-电子相互作用和能带结构效应
2. Influence of band structure effects on domain-wall resistance in diluted ferromagnetic semiconductors [J] . R. Oszwaldowski, J. A. Majewski, T. Dietl Physical review. B, Condensed Matter And Materials Physics . 2006,第15期

机译：带结构效应对稀铁磁半导体中畴壁电阻的影响
3. Impurity-semiconductor band hybridization effects on the critical temperature of diluted magnetic semiconductors - art. no. 075218 [J] . Calderon MJ., Gomez-Santos G., Brey L. Physical Review, B. Condensed Matter . 2002,第7期

机译：杂质-半导体带杂化对稀释的磁性半导体的临界温度的影响-艺术没有。 075218
4. Analytical model of drain current in nanowire MOSFETs including quantum confinement, band structure effects and quasi-ballistic transport: device to circuit performances analysis [C] . Dura J., Martinie S., Munteanu D., 2011 International Conference on Simulation of Semiconductor Processes and Devices . 2011

机译：纳米线MOSFET中漏极电流的分析模型，包括量子约束，能带结构效应和准弹道传输：器件到电路性能分析
5. THE EFFECTS OF INVERSION ASYMMETRY ON DILUTED MAGNETIC SEMICONDUCTORS WITH THE ZINCBLENDE STRUCTURE. [D] . NOBEL, JAN ALAN. 1987

机译：反对称性对具有ZincBlende结构的稀释磁半导体的影响。
6. Carrier States in Ferromagnetic Semiconductors and Diluted Magnetic Semiconductors—Coherent Potential Approach— [O] . Masao Takahashi 2010

机译：铁磁半导体和稀磁半导体中的载流子状态-相干势法
7. Time-dependent model for diluted magnetic semiconductors including band structure and confinement effects [O] . Morandi, Omar, Hervieux, Paul-Antoine, Manfredi, Giovanni 2010

机译：含带结构和约束效应的稀磁半导体的时变模型
8. Modeling the Effects of (lambda)-gun on SSPX Operation: Mode Spectra, Internal Magnetic Field Structure, and Energy Confinement [R] . Hooper, E. B. 2005

机译：模拟（λ）枪对sspX操作的影响：模式光谱，内部磁场结构和能量限制

Time-dependent model for diluted magnetic semiconductors including band structure and confinement effects

摘要

著录项

相似文献

相关主题

期刊订阅