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首页> 外文期刊>Physical review >Stark effect in GaN/AlN nanowire heterostructures: Influence of strain relaxation and surface states
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Stark effect in GaN/AlN nanowire heterostructures: Influence of strain relaxation and surface states

机译：GaN / AlN纳米线异质结构中的斯塔克效应：应变松弛和表面状态的影响

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摘要

We model the quantum confined Stark effect in AlN/GaN/AlN heterostructures grown on top of [0001]-oriented GaN nanowires. The pyroelectric and piezoelectric field are computed in a self-consistent approach, making no assumption about the pinning of the Fermi level, but including an explicit distribution of surface states which can act as a source or trap of carriers. We show that the pyroelectric and piezoelectric field bends the conduction and valence bands of GaN and AlN and transfers charges from the top surface of the nanowire to an electron gas below the heterostructure. As a consequence, the Fermi level is likely pinned near the valence band of AlN at the top surface. The electron gas and surface charges screen the electric field, thereby reducing the Stark effect. The efficient strain relaxation further weakens the piezoelectric polarization. We compute the electronic properties of the heterostructures with a sp~3d~5 s* tight-binding model and compare the theoretical predictions with the available experimental data.
机译：我们对生长在[0001]取向GaN纳米线顶部的AlN / GaN / AlN异质结构中的量子约束Stark效应进行建模。热电和压电场是以自洽的方式计算的，不假设费米能级的固定，而是包括表面态的明确分布，这些表面态可以充当载流子的源或陷阱。我们显示，热电和压电场弯曲GaN和AlN的导带和价带，并将电荷从纳米线的顶表面转移到异质结构下方的电子气中。结果，费米能级可能固定在顶表面的AlN价带附近。电子气和表面电荷屏蔽了电场，从而降低了斯塔克效应。有效的应变松弛进一步削弱了压电极化。我们使用sp〜3d〜5 s *紧密结合模型计算异质结构的电子性质，并将理论预测与可用的实验数据进行比较。

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