Optical coupling of two distant InAs/GaAs quantum dots by a photonic-crystal microcavity

E. Gallardo; L. J. Martinez; A. K. Nowak; D. Sarkar; H. P. van der Meulen; J. M. Calleja; C. Tejedor; I. Prieto; D. Granados; A. G. Taboada; J. M. Garcia; P. A. Postigo

首页> 外文期刊>Physical review >Optical coupling of two distant InAs/GaAs quantum dots by a photonic-crystal microcavity

【24h】

Optical coupling of two distant InAs/GaAs quantum dots by a photonic-crystal microcavity

机译：光子晶体微腔对两个相距较远的InAs / GaAs量子点的光耦合

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Long distance (1.4 μm) interaction of two different InAs/GaAs quantum dots in a photonic crystal micro-cavity is observed. Simultaneous coupling of both quantum dots to the cavity is demonstrated by Purcell effect measurements. Resonant optical excitation in the p state of any of the quantum dots, results in an increase in the s-state emission of the other one. The cavity-mediated coupling can be controlled by varying the excitation intensity. These results represent an experimental step toward the realization of quantum logic operations using distant solid-state qubits.

机译：在光子晶体微腔中观察到两个不同的InAs / GaAs量子点的长距离（1.4μm）相互作用。珀塞尔效应测量证明了两个量子点同时耦合到腔上。任何一个量子点在p状态下的共振光激发都会导致另一个量子点的s状态发射增加。腔介导的耦合可以通过改变激发强度来控制。这些结果代表了使用遥远的固态量子位实现量子逻辑运算的实验性步骤。

著录项

来源
《Physical review》 |2010年第19期|P.193301.1-193301.4|共4页
作者
E. Gallardo; L. J. Martinez; A. K. Nowak; D. Sarkar; H. P. van der Meulen; J. M. Calleja; C. Tejedor; I. Prieto; D. Granados; A. G. Taboada; J. M. Garcia; P. A. Postigo;
展开▼
作者单位

Departamento de Fisica de Materiales. Universidad Autonoma de Madrid, E-28049 Madrid, Spain;

Instituto de Microelectronica de Madrid, Centra National de Microelectronica, Consejo Superior de Investigaciones Cientificas, Isaac Newton 8, PTM Tres Cantos, E-28760 Madrid, Spain;

Departamento de Fisica de Materiales. Universidad Autonoma de Madrid, E-28049 Madrid, Spain;

Departamento de Fisica de Materiales. Universidad Autonoma de Madrid, E-28049 Madrid, Spain Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom;

Departamento de Fisica de Materiales. Universidad Autonoma de Madrid, E-28049 Madrid, Spain;

Departamento de Fisica de Materiales. Universidad Autonoma de Madrid, E-28049 Madrid, Spain;

Departamento de Fisica de Materiales. Universidad Autonoma de Madrid, E-28049 Madrid, Spain;

Instituto de Microelectronica de Madrid, Centra National de Microelectronica, Consejo Superior de Investigaciones Cientificas, Isaac Newton 8, PTM Tres Cantos, E-28760 Madrid, Spain;

Instituto de Microelectronica de Madrid, Centra National de Microelectronica, Consejo Superior de Investigaciones Cientificas, Isaac Newton 8, PTM Tres Cantos, E-28760 Madrid, Spain;

Instituto de Microelectronica de Madrid, Centra National de Microelectronica, Consejo Superior de Investigaciones Cientificas, Isaac Newton 8, PTM Tres Cantos, E-28760 Madrid, Spain;

Instituto de Microelectronica de Madrid, Centra National de Microelectronica, Consejo Superior de Investigaciones Cientificas, Isaac Newton 8, PTM Tres Cantos, E-28760 Madrid, Spain;

Instituto de Microelectronica de Madrid, Centra National de Microelectronica, Consejo Superior de Investigaciones Cientificas, Isaac Newton 8, PTM Tres Cantos, E-28760 Madrid, Spain;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词
quantum dots; quantum wells;

机译：量子点;量子阱;

相似文献

外文文献
中文文献
专利

1. Influence of GaAs Spacer-Layer Thickness on Quantum Coupling and Optical Polarization in a Ten-Layer System of Vertically Correlated InAs/GaAs Quantum Dots [J] . M. M. Sobolev, I. M. Gadzhiyev, M. S. Buyalo, Semiconductors . 2014,第8期

机译：垂直相关的InAs / GaAs量子点十层系统中GaAs间隔层厚度对量子耦合和光偏振的影响
2. Characteristics of InGaAs Submonolayer Quantum-Dot and InAs Quantum-Dot Photonic-Crystal Vertical-Cavity Surface-Emitting Lasers [J] . Yang H.-P. D., Hsu I.-C., Chang Y.-H., Journal of Lightwave Technology . 2008,第11期

机译：InGaAs亚单层量子点和InAs量子点光子晶体垂直腔面发射激光器的特性
3. Dephasing of Triplet-Sideband Optical Emission of a Resonantly Driven InAs/GaAs Quantum Dot inside a Microcavity [J] . S.M. Ulrich, S. Ates, S. Reitzenstein, Physical review letters . 2011,第24期

机译：微腔内部谐振驱动的InAs / GaAs量子点的三重态边带光发射的相移
4. Microcavity-Mediated Coupling of Two Distant InAs/GaAs Quantum Dots [C] . E. Gallardo, L.J. Martinez, A.K. Nowak, International Conference on the Physics of Semiconductors . 2011

机译：微透明度介导的两个远处INAS / GAAs量子点的耦合
5. Optical and Mechanical Investigation of InAs /GaAs Quantum Dots Solar Cells and InAs Nanowires for the Application of Photovoltaic Device. [D] . Dai, Yushuai. 2013

机译：InAs / GaAs量子点太阳能电池和InAs纳米线在光伏器件中的应用的光学和机械研究。
6. Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot [O] . Tarek A Ameen, Hesameddin Ilatikhameneh, Archana Tankasala, 2018

机译：掺杂的自组装InAs / InGaAs / GaAs / AlGaAs量子点中应变相关的光吸收的理论研究
7. Erratum: Optical coupling of two distant InAs/GaAs quantum dots by a photonic-crystal microcavity [O] . Gallardo, E., Martínez, L. J., Nowak, A. K., 2012

机译：勘误：通过光子晶体微腔光学耦合两个远距离的Inas / Gaas量子点

Optical coupling of two distant InAs/GaAs quantum dots by a photonic-crystal microcavity

摘要

著录项

相似文献

相关主题

期刊订阅