Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors

I. Gorczyca; A. Kaminska; G. Staszczak; R. Czernecki; S. P. Lepkowski; T. Suski; H. P. D. Schenk; M. Glauser; R. Butte; J.-F. Carlin; E. Feltin; N. Grandjean; N. E. Christensen; A. Svane

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Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors

机译：含In的氮化物半导体中带隙压力系数的反常成分依赖性

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The pressure-induced changes in the electronic band structures of In-containing nitride alloys, In_xGa_(1-x)N and In_xAl_(1-x)N are examined experimentally as well as by ab initio calculations. It is found that the band gap pressure coefficients, dE_g/dp, exhibit very large bowing with x, and calculations with simulation of clustered distributions of the In atoms over the cation sites show a strong enhancement of this effect. This relates well to the experimental data obtained from pressure dependent photoluminescence measurements for In_xGa_(1-x)N and In_xAl_(1-x)N layers, performed in this work, and combined with existing data for In_xGa_(1-x)N layers. We discuss possible explanations of the anomalously large magnitude of the dE_g/dp bowing in these nitride alloys.

机译：通过实验以及从头算来检查含In的氮化物合金In_xGa_（1-x）N和In_xAl_（1-x）N的电子带结构中的压力诱导变化。发现带隙压力系数dE_g / dp表现出非常大的x弯曲，并且通过模拟In原子在阳离子位点上的簇状分布进行的模拟计算显示了这种效应的强烈增强。这与从这项工作中执行的In_xGa_（1-x）N和In_xAl_（1-x）N层的压力相关光致发光测量获得的实验数据很好地关联，并与In_xGa_（1-x）N层的现有数据相结合。我们讨论了这些氮化物合金中dE_g / dp弯曲异常大的可能解释。

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《Physical review》 |2010年第23期|P.235206.1-235206.6|共6页
作者
I. Gorczyca; A. Kaminska; G. Staszczak; R. Czernecki; S. P. Lepkowski; T. Suski; H. P. D. Schenk; M. Glauser; R. Butte; J.-F. Carlin; E. Feltin; N. Grandjean; N. E. Christensen; A. Svane;
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作者单位

Institute of High Pressures Physics, Polish Academy of Sciences, Warsaw, Poland;

rnInstitute of Physics, Polish Academy of Sciences, Warsaw, Poland;

rnInstitute of High Pressures Physics, Polish Academy of Sciences, Warsaw, Poland;

rnInstitute of High Pressures Physics, Polish Academy of Sciences, Warsaw, Poland;

rnInstitute of High Pressures Physics, Polish Academy of Sciences, Warsaw, Poland;

rnInstitute of High Pressures Physics, Polish Academy of Sciences, Warsaw, Poland;

rnCRHEA-CNRS, Sophia Antipolis, Valbonne, France;

rnInstitute of Condensed Matter Physics, Ecole Polytechnique Federate de Lausanne (EPFL), CH-1015 Lausanne, Switzerland;

rnInstitute of Condensed Matter Physics, Ecole Polytechnique Federate de Lausanne (EPFL), CH-1015 Lausanne, Switzerland;

rnInstitute of Condensed Matter Physics, Ecole Polytechnique Federate de Lausanne (EPFL), CH-1015 Lausanne, Switzerland;

rnInstitute of Condensed Matter Physics, Ecole Polytechnique Federate de Lausanne (EPFL), CH-1015 Lausanne, Switzerland;

rnInstitute of Condensed Matter Physics, Ecole Polytechnique Federate de Lausanne (EPFL), CH-1015 Lausanne, Switzerland;

rnDepartment of Physics and Astronomy, University of Aarhus, Denmark;

rnDepartment of Physics and Astronomy, University of Aarhus, Denmark;

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Ⅲ-Ⅴ semiconductors; optical properties of bulk materials and thin films; semiconductor compounds;

机译：Ⅲ-Ⅴ族半导体;散装材料和薄膜的光学性能;半导体化合物;

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Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors

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