Fast and slow edges in bilayer graphene nanoribbons: Tuning the transition from band to Mott insulator

Alberto Cortijo; Laszlo Oroszlany; Henning Schomerus

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Fast and slow edges in bilayer graphene nanoribbons: Tuning the transition from band to Mott insulator

机译：双层石墨烯纳米带的快边缘和慢边缘：调整从能带到Mott绝缘体的过渡

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We show that gated bilayer graphene zigzag ribbons possess a fast and a slow edge, characterized by edge-state velocities that differ due to non-negligible next-nearest-neighbor hopping elements. By applying bosonization and renormalization group methods, we find that the slow edge can acquire a sizable interaction-induced gap, which is tunable via an external gate voltage V_g. In contrast to the gate-induced gap in the bulk, the interaction-induced gap depends nonmonotonously on the on-site potential V.

机译：我们显示门控双层石墨烯之字形带具有快和慢的边缘，其特征是由于不可忽略的下一近邻跳跃元素而导致的边缘状态速度不同。通过应用玻色化和重归一化组方法，我们发现慢边沿可以获取可观的相互作用感应间隙，该间隙可以通过外部栅极电压V_g进行调整。与整体中的栅极诱导的间隙相反，相互作用引起的间隙非单调地取决于现场电势V。

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来源
《Physical review》 |2010年第23期|P.235422.1-235422.5|共5页
作者
Alberto Cortijo; Laszlo Oroszlany; Henning Schomerus;
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作者单位

Department of Physics, Lancaster University, Lancaster LA1 4YB, United Kingdom;

rnDepartment of Physics, Lancaster University, Lancaster LA1 4YB, United Kingdom;

rnDepartment of Physics, Lancaster University, Lancaster LA1 4YB, United Kingdom;

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surface states, band structure, electron density of states; fermions in reduced dimensions (anyons, composite fermions, luttinger liquid, etc.); electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems;

机译：表面态;能带结构;态电子密度;缩小尺寸的费米子（任意子;复合费米子;吸液剂液体等）;多层;量子阱;介观和纳米级系统中的电子态和集体激发;

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专利

1. Band insulator to Mott insulator transition in a bilayer Hubbard model [J] . S. S. Kancharla, S. Okamoto Physical review. B, Condensed Matter And Materials Physics . 2007,第19期

机译：双层Hubbard模型中的带状绝缘子到Mott绝缘子的过渡
2. Tuning the band structure of graphene nanoribbons through defect-interaction-driven edge patterning [J] . Lin Du, Tam N. Nguyen, Ari Gilman, Physical review. B, Condensed Matter And Materals Physics . 2017,第24期

机译：通过缺陷相互作用驱动的边缘构图调整石墨烯纳米带的能带结构
3. Tuning the band structure of graphene nanoribbons through defect-interaction-driven edge patterning [J] . Lin Du, Tam N. Nguyen, Ari Gilman, Physical Review. B, Condensed Matter . 2017,第23a24CD期

机译：通过缺陷相互作用驱动的边缘图案调节石墨烯纳米波纹的带结构
4. Band Gap Calculations of Bilayer Graphene and Bilayer Armchair Graphene Nanoribbon [C] . E.Sustini, Khairurrijal, F.A.Noor International Conference on Advanced Materials Science and Technology . 2018

机译：双层石墨烯和双层扶手椅石墨烯纳米带隙计算
5. Transport Properties of Bilayer Graphene nanoribbons. [D] . Wang, Minsheng. 2013

机译：双层石墨烯纳米带的传输特性。
6. Continuous and reversible tuning of the disorder-driven superconductor–insulator transition in bilayer graphene [O] . Gil-Ho Lee, Dongchan Jeong, Kee-Su Park, -1

机译：双层石墨烯中无序驱动的超导体-绝缘体转变的连续和可逆调谐
7. Fast and slow edges in bilayer graphene nanoribbons:tuning the transition from band to Mott insulator [O] . Cortijo Fernandez Alberto, Oroszlany Laszlo, Schomerus Henning 2010

机译：双层石墨烯纳米带的快边和慢边：调整从能带到莫特绝缘体的过渡

Fast and slow edges in bilayer graphene nanoribbons: Tuning the transition from band to Mott insulator

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