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Reply to 'Comment on 'Current routes in hydrogenated microcrystalline silicon' '

机译:回复“关于“氢化微晶硅的当前路线”的评论”

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摘要

The comment of Vetushka et al. [Phys. Rev. B 81, 237301 (2010)] represents a conductive atomic force microscopy study of μc-Si: H. The observed higher conductivity at the known columns (grain) edges was suggested to reflect an oxide buildup that is due to a tip-surface contact effect. The commenters further suggest that this is also the case in our observations that we interpreted to be due to the relatively high conductivity of these edges. Taking many and detailed precautions, including all those proposed in the comment, appears to indicate that at least in our samples our original interpretation is valid. This interpretation is strongly supported by our current imaging tunneling spectroscopy study in which no tip-surface contact effect exists.
机译:Vetushka等人的评论。 [物理Rev. B 81,237301(2010)]代表了μc-Si:H的导电原子力显微镜研究。建议在已知的列(晶粒)边缘观察到较高的电导率,以反映由于尖端的氧化物堆积。表面接触效果。评论者进一步建议,在我们的观察中也是如此,我们认为这是由于这些边缘的相对较高的电导率。采取许多详细的预防措施,包括评论中建议的所有预防措施,似乎表明至少在我们的样品中,我们的原始解释是有效的。我们目前的成像隧道光谱学研究强烈支持这种解释,其中不存在尖端表面接触效应。

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  • 来源
    《Physical review》 |2010年第23期|P.237302.1-237302.4|共4页
  • 作者单位

    The Racah Institute of Physics, The Hebrew University, Jerusalem 91904, Israel;

    rnThe Racah Institute of Physics, The Hebrew University, Jerusalem 91904, Israel;

    rnINESC Microsystemas e Nanotechnologies, IN Istitute of Nanoscience and Nanotechnology, Lisbon 1000-029, Portugal Department of Chemical and Biological Engineering, Instituto Superior Tecnico, Lisbon 1049-001, Portugal;

    rnINESC Microsystemas e Nanotechnologies, IN Istitute of Nanoscience and Nanotechnology, Lisbon 1000-029, Portugal Department of Chemical and Biological Engineering, Instituto Superior Tecnico, Lisbon 1049-001, Portugal Department of Materials Engineering, Instituto Superior Tecnico, Lisbon 1049-001, Portugal;

    rnThe Racah Institute of Physics, The Hebrew University, Jerusalem 91904, Israel;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    photoconduction and photovoltaic effects; scanning electron microscopy (SEM) (including EBIC); X-ray microscopy; conductivity phenomena in semiconductors and insulators;

    机译:光电导和光电效应;扫描电子显微镜(SEM)(包括EBIC);X射线显微镜;半导体和绝缘体的电导现象;

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