Effect of surface carrier concentration on valence subbands in Si(111) p-type inversion layers: Angle-resolved photoemission spectroscopy

Sakura Nishino Takeda; rnNaoto Higashi; rnHiroshi Daimon

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Effect of surface carrier concentration on valence subbands in Si(111) p-type inversion layers: Angle-resolved photoemission spectroscopy

机译：表面载流子浓度对Si（111）p型反型层中价子带的影响：角分辨光发射光谱

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We investigated the effect of surface carrier concentration on the quantum levels and the in-plane effective masses of the subbands in Si(111) p-type inversion layers. Two inversion layers with different surface carrier concentrations were made as a result of metallic surface structures. The subband dispersion was measured by angle-resolved photoelectron spectroscopy. The energy levels of the observed subbands at k=0.0 A~(-1) partially agree with the results of the calculation using the triangular approximation. The effective masses are not significantly affected by the surface carrier concentration. The spatial extension of the subband wave functions is discussed.

机译：我们研究了表面载流子浓度对Si（111）p型反型层中子带的量子能级和面内有效质量的影响。由于金属表面结构，制成了具有不同表面载流子浓度的两个反型层。通过角度分辨光电子能谱法测量子带色散。在k = 0.0 A〜（-1）处观察到的子带的能级与使用三角近似的计算结果部分一致。有效质量不受表面载体浓度的显着影响。讨论了子带波函数的空间扩展。

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来源
《Physical review》 |2010年第3期|P.035318.1-035318.5|共5页
作者
Sakura Nishino Takeda; rnNaoto Higashi; rnHiroshi Daimon;
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作者单位

Faculty of Materials Science, Nara Institute of Science and Technology, Nara 630-0192, Japan;

rnFaculty of Materials Science, Nara Institute of Science and Technology, Nara 630-0192, Japan;

Faculty of Materials Science, Nara Institute of Science and Technology, Nara 630-0192, Japan;

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正文语种 eng
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quantum wells;

机译：量子阱;

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Effect of surface carrier concentration on valence subbands in Si(111) p-type inversion layers: Angle-resolved photoemission spectroscopy

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