Current-voltage characteristics of graphene devices: Interplay between Zener-Klein tunneling and defects

著录项

• 来源
  《Physical review》 |2010年第4期|P.045416.1-045416.10|共10页
• 作者

  Niels Vandecasteele; Amelia Barreiro; Michcle Lazzeri; Adrian Bachtold; Francesco Mauri;

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• 作者单位

  IMPMC, IPGP, Universites Paris 6 et 7-CNRS, 140 rue de Lourmel, 75015 Paris, France;

  CIN2, CSIC-ICN, Campus UAB, E-08193 Barcelona, Spain Kavli Institute of Nanoscience Delft. Delft University of Technology, PO Box 5046, 2600 CA Delft. The Netherlands;

  IMPMC, IPGP, Universites Paris 6 et 7-CNRS, 140 rue de Lourmel, 75015 Paris, France;

  CIN2, CSIC-ICN, Campus UAB, E-08193 Barcelona, Spain;

  IMPMC, IPGP, Universites Paris 6 et 7-CNRS, 140 rue de Lourmel, 75015 Paris, France;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  fullerenes and related materials; scattering by point defects, dislocations, surfaces, and other imperfections (including kondo effect); low-field transport and mobility; piezoresistance; fullerenes and related materials;

  机译：富勒烯和相关材料;由于点缺陷;位错;表面和其他缺陷（包括近藤效应）引起的散射;低场传输和迁移;压阻;富勒烯及相关材料;