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Exchange constant and domain wall width in (Ga,Mn)(As,P) films with self-organization of magnetic domains

机译:具有磁畴自组织的(Ga,Mn)(As,P)膜中的交换常数和畴壁宽度

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摘要

The incorporation of phosphorus into (Ga,Mn)As epilayers allows for the tuning of the magnetic easy axis from in-plane to perpendicular-to-plane without the need for a (Ga,In)As template. For perpendicular easy axis, using magneto-optical imaging a self-organized pattern of up- and down-magnetized domains is observed. Combining Kerr microscopy, magnetometry, and ferromagnetic resonance spectroscopy, the exchange constant and the domain wall width parameter are obtained as a function of temperature. The former quantifies the effective Mn-Mn ferromagnetic interaction. The latter is a key parameter for domain wall dynamics. The comparison with results obtained for (Ga,Mn)As/(Ga,In)As reveals the improved quality of the (Ga,Mn)As_(1-y)P_y, layers regarding domain wall pinning, an increase in the domain wall width parameter and of the effective Mn-Mn spin coupling.
机译:通过将磷掺入(Ga,Mn)As外延层中,无需(Ga,In)As模板即可将易磁化轴从平面内调整到垂直于平面。对于垂直的易轴,使用磁光成像可以观察到上下磁畴的自组织模式。结合Kerr显微镜,磁力计和铁磁共振波谱,得出交换常数和畴壁宽度参数随温度的变化。前者量化了有效的Mn-Mn铁磁相互作用。后者是畴壁动力学的关键参数。与(Ga,Mn)As /(Ga,In)As的结果进行的比较表明,关于畴壁钉扎的(Ga,Mn)As_(1-y)P_y层的质量有所改善,畴壁的增加宽度参数和有效的Mn-Mn自旋耦合。

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  • 来源
    《Physical review》 |2010年第4期|P.041301.1-041301.4|共4页
  • 作者单位

    Institut des Nanosciences de Paris, CNRS, UMR 7588, 140 rue de Lourmel, Paris F-75015, France INSP, Universite Pierre et Marie Curie, UMR 7588, Paris, France;

    Institut des Nanosciences de Paris, CNRS, UMR 7588, 140 rue de Lourmel, Paris F-75015, France INSP, Universite Pierre et Marie Curie, UMR 7588, Paris, France;

    Institut des Nanosciences de Paris, CNRS, UMR 7588, 140 rue de Lourmel, Paris F-75015, France INSP, Universite Pierre et Marie Curie, UMR 7588, Paris, France;

    Institut des Nanosciences de Paris, CNRS, UMR 7588, 140 rue de Lourmel, Paris F-75015, France INSP, Universite Pierre et Marie Curie, UMR 7588, Paris, France;

    Laboratoire de Photonique et Nanostructures, CNRS, UPR 20, Route de Nozay, Marcoussis F-91460, France;

    Institut des Nanosciences de Paris, CNRS, UMR 7588, 140 rue de Lourmel, Paris F-75015, France INSP, Universite Pierre et Marie Curie, UMR 7588, Paris, France;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    magnetic semiconductors; domain walls and domain structure; magnetic properties of monolayers and thin films;

    机译:磁性半导体;畴壁和畴结构;单层和薄膜的磁性;

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