...
首页> 外文期刊>Physical review >Quasifreestanding single-layer hexagonal boron nitride as a substrate for graphene synthesis
【24h】

Quasifreestanding single-layer hexagonal boron nitride as a substrate for graphene synthesis

机译:准独立式单层六方氮化硼作为石墨烯合成的基质

获取原文
获取原文并翻译 | 示例
           

摘要

We demonstrate that freeing a single-atom thick layer of hexagonal boron nitride (h-BN) from tight chemical bonding to a Ni(111) thin film grown on a W(l 10) substrate can be achieved by intercalation of Au atoms into the interface. This process has been systematically investigated using angle-resolved photoemission spectros-copy, x-ray photoemission, and absorption techniques. It has been demonstrated that the transition of the h-BN layer from the "rigid" into the "quasifreestanding" state is accompanied by a change in its lattice constant. Using chemical vapor deposition, graphene has been successfully synthesized on the insulating, quasifreestanding h-BN monolayer. We anticipate that the in situ synthesized weakly interacting graphene/h-BN double layered system could be further developed for technological applications and may provide perspectives for further inquiry into the unusual electronic properties of graphene.
机译:我们证明,通过将金原子嵌入到W(l 10)衬底中,可以从紧密化学键合到生长在W(l 10)衬底上的Ni(111)薄膜上释放单原子厚的六方氮化硼(h-BN)厚层。接口。已使用角度分辨光发射光谱仪,X射线光发射和吸收技术系统地研究了此过程。已经证明,h-BN层从“刚性”到“准独立”状态的转变伴随着其晶格常数的变化。通过化学气相沉积,已成功在绝缘的准自立式h-BN单层上合成了石墨烯。我们预期原位合成的弱相互作用石墨烯/ h-BN双层系统可以进一步开发用于技术应用,并可以为进一步研究石墨烯的异常电子特性提供前景。

著录项

  • 来源
    《Physical review》 |2010年第7期|p.075415.1-075415.6|共6页
  • 作者单位

    St. Petersburg State University, St. Petersburg 198504, Russia;

    rnSt. Petersburg State University, St. Petersburg 198504, Russia;

    rnIFW Dresden, P.O. Box 2701/6, D-01171 Dresden, Germany;

    rnIFW Dresden, P.O. Box 270116, D-01171 Dresden, Germany Faculty of Physics, Vienna University, Strudlhofgasse 4, 1090 Wien, Austria;

    rnAnorganische Chemie 8.11, Universitaet des Saarlandes, 66041 Saarbrticken, Germany;

    rnMAX-lab, Lund University, P.O. Box 118, 22100 Lund, Sweden;

    rnInstitute of Solid State Physics, Dresden University of Technology, D-01062 Dresden, Germany;

    rnSt. Petersburg State University, St. Petersburg 198504, Russia Institute of Solid State Physics, Dresden University of Technology, D-01062 Dresden, Germany;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号