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Microwave response of a magnetic single-electron transistor

机译:磁性单电子晶体管的微波响应

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摘要

We consider a single-electron transistor in the form of a ferromagnetic dot in contact with normal-metal and pinned ferromagnetic leads. Microwave-driven precession by the dot induces a pumped electric current. In open circuits, this pumping produces a measurable reverse bias voltage, which can be enhanced and made highly nonlinear by Coulomb blockade in the dot. The dependence of this bias on the power and spectrum of microwave irradiation may be utilized to develop nanoscale microwave detectors analogous to single-electron transistor-based electrostatic sensors and nanoelectromechanical devices.
机译:我们考虑一个铁磁点形式的单电子晶体管,它与普通金属和固定铁磁引线接触。圆点的微波驱动进动会产生泵浦电流。在开路中,这种泵浦会产生可测量的反向偏置电压,可以通过点中的库仑阻塞来增强该反向偏置电压并使之高度非线性。该偏压对微波辐射的功率和光谱的依赖性可以被用来开发类似于基于单电子晶体管的静电传感器和纳米机电装置的纳米级微波检测器。

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