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首页> 外文期刊>Physical review >Spin-polarized two-dimensional electron gas through electrostatic doping in LaAlO_3/EuO heterostructures
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Spin-polarized two-dimensional electron gas through electrostatic doping in LaAlO_3/EuO heterostructures

机译:LaAlO_3 / EuO异质结构中通过静电掺杂产生的自旋极化二维电子气

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摘要

We carry out a first-principles study of stoichiometric heterostructures composed of polar oxide LaA1O_3 and ferromagnetic semiconductor EuO. We show that electrostatic doping achieved by an electric field in the polar oxide leads to a fully spin-polarized two dimensional electron gas at the interface. This mechanism contrasts with a previous calculation of the LaAlO_3/EuO interface in which electron doping is introduced through a nonstoichiometric LaAlO_3 layer. Our system allows a low level of doping in EuO that is comparable to the Gd-doped EuO found in recently reported experiment, and is thickness controllable. We predict a change of magnetic moment of Eu and increase of the Curie temperature in the doped layers of EuO.
机译:我们对由极性氧化物LaA1O_3和铁磁半导体EuO组成的化学计量异质结构进行了第一性原理研究。我们表明,由极性氧化物中的电场实现的静电掺杂会在界面处导致完全自旋极化的二维电子气。该机制与LaAlO_3 / EuO界面的先前计算相反,在该计算中,通过非化学计量的LaAlO_3层引入了电子掺杂。我们的系统允许EuO的低掺杂水平,这与最近报道的实验中发现的掺Gd的EuO相当,并且厚度可控。我们预测了EuO掺杂层中Eu磁矩的变化和居里温度的升高。

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