Excitons bound to Te isoelectronic dyads in ZnSe

S. Marcet; R. Andre; S. Francoeur

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Excitons bound to Te isoelectronic dyads in ZnSe

机译：激子与ZnSe中的Te等电子二元结合

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We report on the excitonic photoluminescence from individual Te dyads in ZnSe. Based on the emission characteristics of these pairs of pseudodonor impurities, we identify dyads of C_(2v) symmetry and determine their orientation with respect to the host lattice. The diamagnetic shift of the exciton indicates that the hole bound to the dyad is extremely localized. Measurements of large number of individual dyads reveal that (1) light-hole transitions located at higher energy are strongly suppressed, (2) the line shape of the observed phonon replica allows probing the phonon density of states, (3) dyads of various interatomic separations are observed, (4) the emission energy is extremely sensitive to the local environment of the dyad, and (5) dynamic variations in this local environment results in the intensity fluctuations and spectral diffusion.

机译：我们报告了ZnSe中单个Te二元化合物的激发光致发光。基于这些对伪施主杂质对的发射特性，我们确定C_（2v）对称的对偶，并确定它们相对于主体晶格的方向。激子的反磁性位移表明与二元体结合的空穴非常局限。对大量单个二元组的测量表明：（1）处于较高能量的光孔跃迁被强烈抑制；（2）观察到的声子复制品的线形允许探测态的声子密度；（3）不同原子间的二元组观察到分离，（4）发射能量对二倍体的局部环境极为敏感，（5）在该局部环境中的动态变化导致强度波动和光谱扩散。

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来源
《Physical review》 |2010年第23期|p.468-474|共7页
作者
S. Marcet; R. Andre; S. Francoeur;
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作者单位

Departement de Genie Physique, Ecole Polytechnique de Montreal, Montreal, Quebec, Canada H3C 3A7;

Nanophysics and Semiconductor Group, Institut Neel, CEA/CNRS/Universite Joseph Fourier,25 rue des Martyrs, 38042 Grenoble, France;

Departement de Genie Physique, Ecole Polytechnique de Montreal, Montreal, Quebec, Canada H3C 3A7;

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optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures; excitons and related phenomena; electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems;

机译：低维;介观和纳米级材料和结构的光学特性;激子和相关现象;多层;量子阱;介观和纳米级系统中的电子态和集体激发;

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专利

1. APS -APS March Meeting 2017 - Event - Radiative lifetime of excitons and trions bound to Te isoelectronic centers in ZnSe [J] . Anne-Laurence Phaneuf-L#039, Heureux, Philippe St-Jean, Bulletin of the American Physical Society . 2017,第4期

机译：APS -APS 2017年3月会议-活动-与ZnSe中Te等电子中心结合的激子和Trions的辐射寿命
2. APS -APS March Meeting 2017 - Event - Radiative lifetime of excitons and trions bound to Te isoelectronic centers in ZnSe [J] . Anne-Laurence Phaneuf-L#039, Heureux, Philippe St-Jean, Bulletin of the American Physical Society . 2017,第4期

机译：APS -APS 2017年3月会议-活动-与ZnSe中Te等电子中心结合的激子和Trions的辐射寿命
3. Quantum confinement of Te bound exciton in ZnSe/ZnSe_(1-x)Te_x and ZnSe/Zn_(1-y)Cd_ySe quantum wells [J] . Chu-shou Yang, Ming-chin Kuo, Yi-jen Lai, Materials Chemistry and Physics . 2003,第1期

机译：Te束缚激子在ZnSe / ZnSe_（1-x）Te_x和ZnSe / Zn_（1-y）Cd_ySe量子阱中的量子约束
4. Time-resolved spectroscopy of single excitons bound to Te isoelectronic pairs in ZnSe [C] . Muller, A., Bianucci, . 2005

机译：ZnSe中与Te等电子对结合的单个激子的时间分辨光谱
5. Strongly-bound Excitons in Transition Metal Dichalcogenides and Organic Semiconductors [D] . Schulzetenberg, Aaron. 2020

机译：过渡金属二甲硅藻和有机半导体中强烈的激子
6. Bound exciton and free exciton states in GaSe thin slab [O] . Chengrong Wei, Xi Chen, Dian Li, -1

机译：GaSe薄板中的束缚激子和自由激子态
7. High-Fidelity and Ultrafast Initialization of a Hole Spin Bound to a Te Isoelectronic Center in ZnSe [O] . St-Jean, P., Éthier-Majcher, G., André, R., 2016

机译：绑定到ZnSe中Te等电子中心的空穴自旋的高保真和超快初始化
8. Radioactive Decay of Excitons Bound to Chalcogen-related Isoelectronic Impurity Complexes in Silicon [R] . Bradfield, P. L., Brown, T. G., Hall, D. G. 1988

机译：激子的放射性衰变与硅中的硫属元素相关的等电子杂质配合物结合

Excitons bound to Te isoelectronic dyads in ZnSe

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