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Gap opening by asymmetric doping in graphene bilayers

机译:石墨烯双层中的不对称掺杂引起的空位开放

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摘要

We study the energy-gap opening in the electronic spectrum of graphene bilayers caused by asymmetric doping. Both substitutional impurities (boron acceptors and nitrogen donors) and adsorbed potassium donors are considered. The gap evolution with dopant concentration is compared to the situation in which the asymmetry between the layers is induced by an external electric field. The effects of adsorbed potassium are similar to that of an electric field, but substitutional impurities behave quite differently, showing smaller band gaps and a large sensitivity to disorder and sublattice occupation.
机译:我们研究了由不对称掺杂引起的石墨烯双层电子谱中的能隙开口。取代杂质(硼受体和氮供体)和吸附的钾供体均被考虑。将具有掺杂剂浓度的间隙发展与由外部电场引起层之间的不对称性的情况进行比较。吸附的钾的作用与电场的作用相似,但取代杂质的行为却大不相同,显示出较小的带隙以及对无序和亚晶格占据的较大敏感性。

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