Defects in AlSb: A density functional study

Mao-Hua Du

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Defects in AlSb: A density functional study

机译：AlSb中的缺陷：密度泛函研究

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We carry out density functional calculations to study both intrinsic and extrinsic defects in AlSb. We focus on the carrier compensation and trapping properties of these defects, which are important to the radiation detection applications. We show that the Sb antisite (Sb_(Al)) is a low-energy defect, with interesting property of light-induced metastability, similar to the As antisite in GaAs. Sb_(Al) is effective in compensating holes induced by the residual carbon but is also a deep electron trap that reduces the carrier drifting length. We discuss the possibility of using hydrogenated isovalent N impurity in AlSb and GaAs to pin the Fermi level without causing efficient carrier trapping.

机译：我们进行密度泛函计算，以研究AlSb的内在缺陷和外在缺陷。我们专注于这些缺陷的载流子补偿和俘获特性，这对辐射检测应用很重要。我们表明，Sb反位点（Sb_（Al））是一种低能缺陷，具有光诱导的亚稳态的有趣特性，类似于GaAs中的As反位点。 Sb_（Al）可有效补偿由残留碳引起的空穴，但它也是一种深电子陷阱，可减小载流子漂移长度。我们讨论了在AlSb和GaAs中使用氢化的等效N杂质来固定费米能级而不引起有效载流子俘获的可能性。

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来源
《Physical review》 |2009年第4期|390-396|共7页
作者
Mao-Hua Du;
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作者单位

Materials Science and Technology Division and Center for Radiation Detection Materials and Systems, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA;

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正文语种 eng
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theories and models of crystal defects; Ⅲ-Ⅴ semiconductors;

机译：晶体缺陷的理论和模型;Ⅲ-Ⅴ族半导体;

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Defects in AlSb: A density functional study

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