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Thin-film Josephson junctions with alternating critical current density

机译:具有交替临界电流密度的薄膜约瑟夫逊结

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We study the field dependence of the maximum current I_m(H) in narrow edge-type thin-fiI_m Josephson junctions with alternating critical current density. I_m(H) is evaluated within nonlocal Josephson electrodynamics taking into account the stray fields that affect the difference of the order-parameter phases across the junction and therefore the tunneling currents. We find that the phase difference along the junction is proportional to the applied field, depends on the junction geometry, but is independent of the Josephson critical current density g_c, i.e., it is universal. An explicit form for this universal function is derived for small currents through junctions of the width W
机译:我们研究了具有临界电流密度变化的窄边型薄fiI_m Josephson结中最大电流I_m(H)的场依存性。在非局部约瑟夫森电动力学中评估I_m(H)时要考虑杂散场,这些杂散场会影响跨结的阶次参数相位的差异,从而影响隧道电流。我们发现,沿结的相位差与施加的电场成比例,取决于结的几何形状,但与约瑟夫森临界电流密度g_c无关,即,它是通用的。对于通用电流的明确形式,是通过宽度W

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