Ferromagnetism and spin-polarized charge carriers in In_2O_3 thin films

Raghava P. Panguluri; P. Kharel; C. Sudakar; R. Naik; R. Suryanarayanan; V. M. Naik; A. G. Petukhov; B. Nadgorny; G. Lawes

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Ferromagnetism and spin-polarized charge carriers in In_2O_3 thin films

机译：In_2O_3薄膜中的铁磁性和自旋极化载流子

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We present evidence for spin-polarized charge carriers in In_2O_3 films. Both In_2O_3 and Cr doped In_2O_3 films exhibit room-temperature ferromagnetism after vacuum annealing, with a saturation moment reaching approximately 0.5 emu/cm~3 for the Cr doped samples. We used point contact Andreev reflection measurements to directly determine the spin polarization, which was found to be approximately 50% ±5% for both compositions. These results are consistent with suggestions that the ferromagnetism observed in certain oxide semiconductors may be carrier mediated.

机译：我们提供In_2O_3薄膜中自旋极化电荷载流子的证据。 In_2O_3和Cr掺杂的In_2O_3薄膜在真空退火后均表现出室温铁磁性，对于Cr掺杂的样品，其饱和矩约为0.5 emu / cm〜3。我们使用点接触Andreev反射测量来直接确定自旋极化，发现两种成分的自旋极化约为50％±5％。这些结果与某些氧化物半导体中观察到的铁磁性可能是载流子介导的建议相一致。

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来源
《Physical review》 |2009年第16期|362-367|共6页
作者
Raghava P. Panguluri; P. Kharel; C. Sudakar; R. Naik; R. Suryanarayanan; V. M. Naik; A. G. Petukhov; B. Nadgorny; G. Lawes;
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作者单位

Department of Physics and Astronomy, Wayne State University, Detroit, Michigan 48201, USA;

Department of Physics and Astronomy, Wayne State University, Detroit, Michigan 48201, USA;

Department of Physics and Astronomy, Wayne State University, Detroit, Michigan 48201, USA;

Department of Physics and Astronomy, Wayne State University, Detroit, Michigan 48201, USA;

Department of Physics and Astronomy, Wayne State University, Detroit, Michigan 48201, USA;

Department of Natural Sciences, University of Michigan-Dearborn, Dearborn, Michigan 48128, USA;

Department of Natural Sciences, University of Michigan-Dearborn, Dearborn, Michigan 48128, USA;

Department of Physics and Astronomy, Wayne State University, Detroit, Michigan 48201, USA;

Department of Physics and Astronomy, Wayne State University, Detroit, Michigan 48201, USA;

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正文语种 eng
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magnetic semiconductors; spin polarized transport in semiconductors; magnetic properties of monolayers and thin films;

机译：磁性半导体半导体中的自旋极化传输;单层和薄膜的磁性;

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专利

1. Role of carrier and spin in tuning ferromagnetism in Mn and Cr-doped In_2O_3 thin films [J] . Feng-Xian Jiang, Xiao-Hong Xu, Jun Zhang, Applied Physicsletters . 2010,第5期

机译：载流子和自旋在掺杂Mn和Cr的In_2O_3薄膜中调节铁磁性中的作用
2. Enhancement of carrier-mediated ferromagnetism in Zr/Fe-codoped In_2O_3 films [J] . H. Kim, M. Osofsky, R. C. Y. Auyeung, Applied Physics Letters . 2012,第14期

机译：Zr / Fe掺杂In_2O_3薄膜中载流子介导的铁磁性的增强
3. Spin-polarized charge carrier injection by tunneling from ferromagnetic contacts into organic semiconductors [J] . M. Yunus P. P. Ruden and D. L. Smith Applied Physics Letters . 2010,第22期

机译：通过从铁磁触点隧穿到有机半导体中来注入自旋极化载流子
4. Room Temperature Ferromagnetism In Undoped And Ni Doped In_2O_3 Thin Films [C] . N. Sai Krishna, S. Kaleemulla, G. Amarendra, DAE Solid State Physics Symposium . 2015

机译：室温铁磁性未掺杂和Ni掺杂IN_2O_3薄膜
5. Charge carrier photogeneration and transport in pentacene thin films. [D] . Gao, Jianbo. 2009

机译：并五苯薄膜中载流子的光生和输运。
6. Influence of Solution Deposition Process on Modulating Majority Charge Carrier Type and Quality of Perovskite Thin Films for Solar Cells [O] . Chuangchuang Chang, Xiaoping Zou, Jin Cheng, 2019

机译：溶液沉积工艺对调制钙离子电池太阳能电池多数载流子类型和质量的影响
7. Ferromagnetism and spin polarized charge carriers in In$_{2}$O$_{3}$ thin films [O] . Panguluri, Raghava P., Kharel, P., Sudakar, C., 2008

机译：In $ _ {2} $ O $ _ {3} $中的铁磁性和自旋极化电荷载流子薄膜

Ferromagnetism and spin-polarized charge carriers in In_2O_3 thin films

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