Zn1-Xmgo (x=0.075, 0.15, 0.25,0.35, 0.65) thin films with single crystal Si(100) substrate have been prepared by pulsed laser deposition(PLD) in vacuum and oxygen atmosphere. The influence of Mg doping content, oxygen pressure and annealing temperature was investigated on the magnetism of ZnO thin films. The analytical results suggest that the Mg doping content would affect the concentration of defect of thin films and resultantly the spin polarization effect of ions around defects, which would affect the magnetism of thin films. The concentrate of Ozn increase with increasing oxygen pressure, but too high concentrate of defects would make the defect-couple emerge,which makes the magnetism in thin films increase first and then decrease. Annealing affects the crystallization and the amount of defects, which also would affect the magnetism of thin films. The dependence of magnetism in Mg doped ZnO on the three factors above mentioned has relationship with the variation of defect concentration.%采用脉冲激光沉积( PLD)方法在单晶Si(100)衬底上制备2n1 -xMgxO(x=0.075,0.15,0.35,0.65)薄膜,研究了不同Mg含量掺杂、氧压、退火温度对其磁性的影响.分析表明,Mg掺杂量会影响薄膜中的缺陷浓度,进而影响缺陷周围离子中的自旋极化效应,对薄膜磁性产生影响.氧压的增大会使Zn0.925Mg0.075O薄膜中锌位氧(Ozn)缺陷浓度增大,但是,缺陷浓度过大又会使薄膜中出现缺陷对,这些影响使薄膜磁性随氧压的增大先增大后减小.而后续退火会影响薄膜结晶质量和缺陷浓度,也会对薄膜磁性产生影响.上述三个因素对Mg掺杂ZnO薄膜磁性的影响都与薄膜中的缺陷浓度变化有关.
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