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首页> 外文期刊>Physical review >Optical characterization of Zn_(0.95-x)Be_xMn_(0.05)Se mixed crystals
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Optical characterization of Zn_(0.95-x)Be_xMn_(0.05)Se mixed crystals

机译：Zn_（0.95-x）Be_xMn_（0.05）Se混合晶体的光学表征

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摘要

A systematic study of a series of Zn_(0.95-x)Be_xMn_(0.05)Se mixed crystals with different Be content (0.05 ≤X ≤ 0.20) grown by the modified high-pressure Bridgman method were carried out by room-temperature surface photovoltage spectroscopy (SPS), temperature-dependent photoluminescence (PL), and contactless electrore-flectance (CER). A typical PL spectrum at low temperature consists of free exciton line, an edge emission due to recombination of shallow donor-acceptor pairs, and the Mn~(2+)-related intraionic emission. The near band-edge transition energies determined by analyzing the CER and SPS spectra showed a blueshift with the increase in Be content. The peak positions of band-edge exciton features in the PL spectra shifted slightly toward lower energies as compared to the corresponding transition energies obtained from CER and SPS data. The observed increases in the CER-PL shift with the increasing of Be content are explained by the increasing compositional disorder causing the smearing of the band-edge energies. The excitonic line broadening for the samples with larger Be/Zn ratio are attributed in part to the alloy-scattering effects and also to the poorer crystalline quality of the samples with higher content of Be. In addition, the parameters that describe the temperature dependence of the transition energies and broadening parameters of the band-edge excitonic transitions were evaluated and discussed.
机译：利用室温表面光电压光谱法，对采用改进的布里奇曼法生长的一系列不同Be含量（0.05≤X≤0.20）的Zn_（0.95-x）Be_xMn_（0.05）Se混合晶体进行了系统研究。 （SPS），取决于温度的光致发光（PL）和非接触电反射（CER）。低温下典型的PL光谱由自由激子线，由于浅的施主-受主对的重组引起的边缘发射以及Mn〜（2+）相关的​​离子内发射组成。通过分析CER和SPS光谱确定的近带边跃迁能量显示出随着Be含量的增加而发生蓝移。与从CER和SPS数据获得的相应跃迁能量相比，PL谱中带边缘激子特征的峰位置向较低能量略微偏移。观察到的CER-PL位移随Be含量的增加而增加，这是由引起带边缘能量拖尾的成分紊乱增加所解释的。具有较大Be / Zn比的样品的激子线变宽部分归因于合金的散射效应，也归因于B​​e含量较高的样品的较差的结晶质量。此外，评估和讨论了描述跃迁能量对温度的依赖性的参数以及带边激子跃迁的展宽参数。

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  • 来源
    《Physical review》 |2009年第23期|460-467|共8页
  • 作者

    D. O. Dumcenco; C. T. Huang; Y. S. Huang; F. Firszt; S. Legowski; H. Meczynska; A. Marasek; K. K. Tiong;

  • 作者单位

    Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan;

    Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan;

    Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan;

    Institute of Physics, N. Copernicus University, Grudziadzka 5/7, 87-100 Torun, Poland;

    Institute of Physics, N. Copernicus University, Grudziadzka 5/7, 87-100 Torun, Poland;

    Institute of Physics, N. Copernicus University, Grudziadzka 5/7, 87-100 Torun, Poland;

    Institute of Physics, N. Copernicus University, Grudziadzka 5/7, 87-100 Torun, Poland;

    Department of Electrical Engineering, National Taiwan Ocean University, Keelung 202, Taiwan;

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  • 正文语种 eng
  • 中图分类
  • 关键词

    magnetic semiconductors; optical properties of bulk materials and thin films; Ⅱ-Ⅵ semiconductors; optical properties of surfaces;

    机译：磁性半导体散装材料和薄膜的光学性能;Ⅱ-Ⅵ半导体;表面的光学性质;

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