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Evidence for strongly coupled charge-density-wave ordering in three-dimensional R_5Ir_4Si_(10) compounds from optical measurements

机译:来自光学测量的三维R_5Ir_4Si_(10)化合物中强耦合电荷密度波排序的证据

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We report optical spectra of Lu_5Ir_4Si_(10) and Er_5Ir_4Si_(10), exhibiting the phenomenon of coexisting superconductivity or antiferromagnetism and charge-density wave (CDW) order. We measure the maximum value of the charge-density wave gap present on part of the Fermi surface of Lu_5Ir_4Si_(10), corresponding to a ratio 2Δ/k_BT_(CDW) approx= 10, well above the value in the limit of weak electron-phonon coupling. Strong electron-phonon coupling was confirmed by analyzing the optical conductivity with the Holstein model describing the electron-phonon interactions, indicating the coupling to phonons centered at 30 meV, with a coupling constant λ ≈2.6. Finally we provide evidence that approximately 16% of the Fermi surface of Lu_5Ir_4Si_(10) becomes gapped in the CDW state.
机译:我们报告了Lu_5Ir_4Si_(10)和Er_5Ir_4Si_(10)的光谱,展示了超导或反铁磁性和电荷密度波(CDW)并存的现象。我们测量Lu_5Ir_4Si_(10)的费米表面的一部分上存在的电荷密度波隙的最大值,对应于比率2Δ/ k_BT_(CDW)大约= 10,远高于弱电子极限中的值-声子耦合。通过用描述电子-声子相互作用的荷斯坦模型分析光导率,证实了强电子-声子耦合,表明与以30 meV为中心的声子的耦合,耦合常数为λ≈2.6。最后,我们提供的证据表明,在CDW状态下,Lu_5Ir_4Si_(10)的费米表面约有16%变得有空隙。

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