Electronic transport in ferromagnetic conductors with inhomogeneous magnetic order parameter and domain-wall resistance

Christian Wickles; Wolfgang Belzig

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Electronic transport in ferromagnetic conductors with inhomogeneous magnetic order parameter and domain-wall resistance

机译：具有不均匀磁阶参数和畴壁电阻的铁磁导体中的电子传输

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We microscopically derive transport equations for the conduction electrons in ferromagnetic materials with an inhomogeneous magnetization profile. Our quantum kinetic approach includes elastic scattering and aniso-tropic spin-flip scattering at magnetic impurities. In the diffusive limit, we calculate the resistance through a domain wall and find that the domain-wall resistance can be positive or negative. In the limit of long domain walls we derive analytical expressions and compare them with existing works, which used less general models or different theoretical frameworks.

机译：我们从微观上得出具有不均匀磁化曲线的铁磁材料中的传导电子的传输方程。我们的量子动力学方法包括在磁性杂质处的弹性散射和各向异性自旋翻转散射。在扩散极限中，我们计算通过畴壁的电阻，发现畴壁电阻可以为正或负。在长畴壁的范围内，我们导出分析表达式并将其与现有工作进行比较，这些工作使用了较少的一般模型或不同的理论框架。

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来源
《Physical review》 |2009年第10期|104435.1-104435.17|共17页
作者
Christian Wickles; Wolfgang Belzig;
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作者单位

Fachbereich Physik, Universitaet Konstanz, 78457 Konstanz, Germany;

Fachbereich Physik, Universitaet Konstanz, 78457 Konstanz, Germany;

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正文语种 eng
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关键词
domain walls and domain structure; magnetic properties of thin films, surfaces, and interfaces; general theory, scattering mechanisms; contact resistance, contact potential;

机译：畴壁和畴结构;薄膜;表面和界面的磁性能;一般理论;散射机制;接触电阻;接触电位;

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专利

1. Domain-Wall Resistance in Ferromagnetic (Ga,Mn)As [J] . D. Chiba, M. Yamanouchi, F. Matsukura, Physical review letters . 2006,第9期

机译：铁磁（Ga，Mn）As中的畴壁电阻
2. Intrinsic Domain-Wall Resistance in Ferromagnetic Semiconductors [J] . Anh Kiet Nguyen, R. V. Shchelushkin, Arne Brataas Physical review letters . 2006,第13期

机译：铁磁半导体的固有畴壁电阻
3. Influence of band structure effects on domain-wall resistance in diluted ferromagnetic semiconductors [J] . R. Oszwaldowski, J. A. Majewski, T. Dietl Physical review. B, Condensed Matter And Materials Physics . 2006,第15期

机译：带结构效应对稀铁磁半导体中畴壁电阻的影响
4. Spin Polarized Transport through Structures Consist of the Ferromagnetic Semiconductor in Presence of a Inhomogeneous Magnetic Field [C] . Zahra Bamshad International Conference on Manufacturing Science and Engineering . 2011

机译：通过结构由结构组成的旋转偏振的传输包括在不均匀磁场的情况下的铁磁半导体
5. Magnetic and magnetotransport investigations of manganese doped ferromagnetic II-VI and III-V diluted magnetic semiconductors (DMS). [D] . Eginligil, Mustafa. 2010

机译：锰掺杂铁磁II-VI和III-V稀磁半导体（DMS）的磁和磁传输研究。
6. Time-resolved imaging of nonlinear magnetic domain-wall dynamics in ferromagnetic nanowires [O] . Falk-Ulrich Stein, Lars Bocklage, Markus Weigand, -1

机译：铁磁纳米线中非线性磁畴壁动力学的时间分辨成像
7. Electronic transport in ferromagnetic conductors with inhomogeneous magnetic order parameter -- domain-wall resistance [O] . Wickles, Christian, Belzig, Wolfgang 2009

机译：非均匀铁磁导体中的电子传输磁性有序参数 - 畴壁电阻
8. Interplay between electronic transport and magnetic order in ferromagnetic magnetic manganite thin films [R] . Hundley, M. F., Neumeier, J. J., Heffner, R. H., 1997

机译：铁磁性亚锰酸盐薄膜中电子传输与磁性有序的相互作用

Electronic transport in ferromagnetic conductors with inhomogeneous magnetic order parameter and domain-wall resistance

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