Magnetodielectric coupling in nonmagnetic Au/GaAs:Si Schottky barriers

S. Tongay; A. F. Hebard; Y. Hikita; H. Y. Hwang

首页> 外文期刊>Physical review >Magnetodielectric coupling in nonmagnetic Au/GaAs:Si Schottky barriers

【24h】

Magnetodielectric coupling in nonmagnetic Au/GaAs:Si Schottky barriers

机译：非磁性Au / GaAs：Si肖特基势垒中的磁电耦合

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

We report on a heretofore unnoted giant negative magnetocapacitance (＞20%) in nonmagnetic Au/GaAs;Si Schottky barriers that we attribute to a magnetic field induced increase in the binding energy of the shallow donor Si impurity atoms. Depletion capacitance (C_(dep)) dispersion identifies the impurity ionization and capture processes that give rise to a magnetic field dependent density of ionized impurities. Internal photoemission experiments confirm that the large field-induced shifts in the built-in potential, inferred from 1 /C_(dep)~2 vs voltage measurements, are not due to a field-dependent Schottky barrier height, thus requiring a modification of the abrupt junction approximation that accounts for the observed magnetodielectric coupling.

机译：我们报道了迄今未发现的在非磁性Au / GaAs中的巨大负磁电容（> 20％）；我们将Si肖特基势垒归因于磁场引起的浅施主Si杂质原子的结合能增加。耗尽电容（C_（dep））弥散确定了杂质电离和捕获过程，这些过程引起了磁场相关的电离杂质的密度。内部光发射实验证实，从1 / C_（dep）〜2与电压测量值推论得出，内置电势的大场感应位移不是由于场相关的肖特基势垒高度引起的，因此需要修改突然的结近似值，说明了观察到的磁电耦合。

著录项

来源
《Physical review》 |2009年第20期|205324.1-205324.7|共7页
作者
S. Tongay; A. F. Hebard; Y. Hikita; H. Y. Hwang;
展开▼
作者单位

Department of Physics, University of Florida, Gainesville, Florida 32611-8440, USA;

Department of Physics, University of Florida, Gainesville, Florida 32611-8440, USA;

Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277-8561, Japan;

Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277-8561, Japan Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词
surface double layers, schottky barriers, and work functions; semiconductor compounds; Ⅲ-Ⅴ semiconductors;

机译：表面双层;肖特基势垒和功函数;半导体化合物Ⅲ-Ⅴ族半导体;

相似文献

外文文献
中文文献
专利

1. Electrochemical formation and properties of n-GaAs/Au and n-GaAs/Ag Schottky barriers: Influence of surface composition upon the barrier height [J] . De Vrieze A., Gomes WP., Forment S., Physical chemistry chemical physics: PCCP . 2001,第23期

机译：n-GaAs / Au和n-GaAs / Ag肖特基势垒的电化学形成和性质：表面成分对势垒高度的影响
2. Analysis of barrier height inhomogeneity in Au-GaAs Schottky barrier diodes by Tung model [J] . Soylu M, Yakuphanoglu F Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2010,第1期

机译：用Tung模型分析Au / n-GaAs肖特基势垒二极管的势垒高度不均匀性
3. Nonideality of Au/Si and Au/GaAs Schottky barriers due to process-induced defects [J] . Maeda K Applied Surface Science . 2006,第16期

机译：由于工艺引起的缺陷，导致Au / Si和Au / GaAs肖特基势垒不理想
4. Electronic and optoelectronic characterization of Au Schottky barrier contacts on MOCVD grown (1) GaAs/Ge, (2) GaAs/Ge/Si and (3) GaAs/Si [C] . Chan E.Y., Awal M.A., El-Hang Lee, Electron Devices Meeting, 1986 International . -1

机译：在MOCVD生长的（1）GaAs / Ge，（2）GaAs / Ge / Si和（3）GaAs / Si上的Au肖特基势垒接触的电子和光电表征
5. SCHOTTKY BARRIER DIODES AND THEIR APPLICATION AS SCHOTTKY BARRIER RESISTORS [D] . HOGEBOOM, JOHN GORDON. 1973

机译：肖特基势垒二极管及其作为肖特基势垒电阻的应用
6. Compact Surface Plasmon Resonance System with Au/Si Schottky Barrier [O] . Takuya Tsukagoshi, Yuta Kuroda, Kentaro Noda, 2018

机译：具有Au / Si肖特基势垒的紧凑型表面等离子体共振系统
7. Magnetodielectric Coupling in Nonmagnetic Au/GaAs:Si Schottky Barriers [O] . Tongay, S., Hebard, A. F., Hikita, Y., 2009

机译：非磁性au / Gaas：si肖特基势垒中的磁电介质耦合
8. Zero-Bias Contact Resistances of Au-GaAs Schottky Barriers [R] . McColl, M. M., Millea, M. F., Mead, C. A. 1972

机译：au-Gaas肖特基势垒的零偏接触电阻

Magnetodielectric coupling in nonmagnetic Au/GaAs:Si Schottky barriers

摘要

著录项

相似文献

相关主题

期刊订阅