Modeling disorder in graphene

Vitor M. Pereira; J. M. B. Lopes dos Santos; A. H. Castro Neto

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Modeling disorder in graphene

机译：石墨烯中的建模障碍

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摘要

We present a study of different models of local disorder in graphene. Our focus is on the main effects that vacancies (random, compensated, and uncompensated), local impurities, and substitutional impurities bring into the electronic structure of graphene

机译：我们提出了对石墨烯局部失调的不同模型的研究。我们的重点是空位（随机，补偿和无补偿），局部杂质和替代杂质带入石墨烯电子结构的主要影响

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来源
《Physical review》 |2008年第11期|224-240|共17页
作者
Vitor M. Pereira; J. M. B. Lopes dos Santos; A. H. Castro Neto;
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正文语种 eng
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electronic structure of disordered solids; carbon; diamond; graphite; impurity and defect levels;

机译：无序固体的电子结构;碳;钻石;石墨;杂质和缺陷水平;

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Modeling disorder in graphene

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