Suppression of competing tunneling processes in thermally-activated carrier emission on self-assembled InAs quantum dots

A. Schramm; S. Schulz; Ch. Heyn; W. Hansen

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Suppression of competing tunneling processes in thermally-activated carrier emission on self-assembled InAs quantum dots

机译：自组装InAs量子点上热激活载流子发射中竞争性隧穿过程的抑制

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Electron emission from charged self-assembled InAs quantum dots is studied by means of deep level transient spectroscopy in strong magnetic fields applied parallel to the quantum-dot layer. Since a magnetic field oriented parallel to the quantum-dot layer

机译：通过在与量子点层平行施加的强磁场中的深能级瞬态光谱研究了带电自组装InAs量子点的电子发射。由于磁场的方向平行于量子点层

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《Physical review》 |2008年第15期|42-45|共4页
作者
A. Schramm; S. Schulz; Ch. Heyn; W. Hansen;
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quantum dots;

机译：量子点;

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专利

1. Study on carrier trapping and emission processes in InAs/GaAs self-assembled quantum dots by varying filling pulse width during DLTS measurements [J] . Jin Soak Kim, Eun Kyu Kim, Jun Oh Kim, Superlattices and microstructures . 2009,第1a2期

机译：在DLTS测量中通过改变填充脉冲宽度研究InAs / GaAs自组装量子点中的载流子俘获和发射过程
2. Temperature-dependent carrier tunneling for self-assembled InAs/GaAs quantum dots with a GaAsN quantum well injector [J] . C. Y. Jin, S. Ohta, M. Hopkinson, Applied Physicsletters . 2010,第15期

机译：GaAsN量子阱注入器用于自组装InAs / GaAs量子点的温度相关载流子隧穿
3. Spin polarization of carriers in resonant tunneling devices containing InAs self-assembled quantum dots [J] . J. Araujo e Nobrega, V. Orsi Gordo, H.V.A. Galeti, Superlattices and microstructures . 2015,第DECa期

机译：包含InAs自组装量子点的共振隧穿器件中载流子的自旋极化
4. Static and dynamic characteristics of self-assembled InAs-GaAs quantum dot laser considering carrier recombination and carrier escape time by using circuit-level modeling [C] . Pa Mahdi Razm-, Emami Farzin Spanish Conference on Electron Devices . 2013

机译：通过电路级建模考虑载流子复合和载流子逸出时间的自组装InAs-GaAs量子点激光器的静态和动态特性
5. Ultrafast carrier dynamics in semiconductor self-assembled quantum dots in the low carrier density regime. [D] . Urayama, Junji. 2002

机译：在低载流子密度状态下，半导体自组装量子点中的超快载流子动力学。
6. Telecommunication Wavelength-Band Single-Photon Emission from Single Large InAs Quantum Dots Nucleated on Low-Density Seed Quantum Dots [O] . Ze-Sheng Chen, Ben Ma, Xiang-Jun Shang, 2016

机译：低密度种子量子点上成核的单个InAs量子点的电信波带单光子发射
7. Tunneling carrier escape from InAs self-assembled quantum dots [O] . 2001

机译：隧道载体从Inas自组装量子点逃逸

Suppression of competing tunneling processes in thermally-activated carrier emission on self-assembled InAs quantum dots

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