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首页> 外文期刊>Physical review >Effect of hydrogen passivation on luminescence-center-mediated Er excitation in Si-rich SiO_2 with and without Si nanocrystals
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Effect of hydrogen passivation on luminescence-center-mediated Er excitation in Si-rich SiO_2 with and without Si nanocrystals

机译：氢钝化对有无硅纳米晶的富硅SiO_2中发光中心介导的Er激发的影响

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摘要

The influence of hydrogen passivation on luminescence-center-mediated excitation of Er~(3+) in Er-doped Si-rich SiO_2 films with significantly different microstructures is studied. Photoluminescence measurements are presented for samples containing no detectable silicon nanocrystals (annealed at 600 ℃) and for samples containing silicon nanocrystals (annealed at 1100 ℃) as a function of hydrogen passivation temperature. Passivation is found to have little effect on the Er~(3+) photoluminescence intensity at 1535 nm in the samples that do not contain nanocrystals. In contrast, a pronounced increase in the Er~(3+) photoluminescence intensity is observed in the samples containing Si nanocrystals, which is accompanied by a similar increase in the nano-crystal photoluminescence intensity and a gradual increase in the Si nanocrystal emission lifetime. This observation is attributed to two interrelated effects, namely, (a) an increase in the density of fully passivated optically active nanocrystals due to the passivation-induced removal of silicon dangling bonds and (b) a concurrent reduction in nonradiative Er~(3+) relaxation from levels above the ~4I_(13/2) level due to a direct interaction of excited Er~(3+) ions with silicon dangling bonds. In addition, the observed counterintuitive gradual increase in the nanocrystal photoluminescence decay time upon passivation is successfully explained taking into account a passivation-induced change in the concentration of optically active nanocrystals with different sizes and the inhomogeneous nature of the nanocrystal-related emission band. It is shown that the combination of luminescence-center-mediated Er~(3+) excitation and silicon-dangling-bond-induced Er~(3+) de-excitation can explain at least 14 experimental observations reported by independent authors.
机译：研究了氢钝化对微结构差异显着的掺Si富硅SiO_2薄膜中Er〜（3+）的发光中心介导激发的影响。给出了不包含可检测的硅纳米晶体的样品（在600℃退火）和包含硅纳米晶体的样品（在1100℃退火）随氢钝化温度变化的光致发光测量结果。在不包含纳米晶体的样品中，发现钝化对1535 nm处的Er〜（3+）光致发光强度几乎没有影响。相反，在包含Si纳米晶体的样品中观察到Er〜（3+）光致发光强度的显着增加，这伴随着纳米晶体光致发光强度的类似增加和Si纳米晶体发射寿命的逐渐增加。该观察结果归因于两个相互关联的影响，即，（a）由于钝化诱导的硅悬空键的去除，导致完全钝化的光学活性纳米晶体的密度增加；（b）同时降低了非辐射Er〜（3+ ）由于激发的Er〜（3+）离子与硅悬键的直接相互作用而从〜4I_（13/2）水平以上的水平弛豫。此外，考虑到钝化引起的具有不同尺寸的光学活性纳米晶体的浓度变化以及纳米晶体相关发射带的不均匀性质，成功地解释了钝化后观察到的纳米晶体光致发光衰减时间的反直觉逐渐增加。结果表明，发光中心介导的Er〜（3+）激发和硅悬空键诱导的Er〜（3+）激发相结合可以解释至少14个独立作者的实验观察。

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