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Microscopic theory of the proximity effect in superconductor-graphene nanostructures

机译：超导体-石墨烯纳米结构中邻近效应的微观理论

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摘要

We present a theoretical analysis of the proximity effect at a graphene-superconductor interface. We use a tight-binding model for the electronic states in this system, which allows us to describe the interface at the microscopic level. Two different interface models are proposed: one in which the superconductor induces a finite pairing in the graphene regions underneath, thus maintaining the honeycomb structure at the interface and one that assumes that the graphene layer is directly coupled to a bulk superconducting electrode. We show that properties such as the Andreev reflection probability and its channel decomposition critically depend on the model used to describe the interface. We also study the proximity effect on the local density of states on the graphene. For finite layers, we analyze the induced minigap and how it is reduced when the length of the layer increases. The results for the local density of states profiles for finite and semi-infinite layers are presented.
机译：我们提出了石墨烯-超导体界面附近效应的理论分析。我们对该系统中的电子状态使用紧密绑定模型，该模型允许我们在微观级别描述接口。提出了两种不同的界面模型：一种模型，其中超导体在下面的石墨烯区域中引起有限配对，从而在界面处保持蜂窝结构；另一种模型假设石墨烯层直接耦合到体超导电极。我们表明，诸如Andreev反射概率及其通道分解之类的属性严格取决于用于描述界面的模型。我们还研究了石墨烯上状态局部密度的邻近效应。对于有限层，我们分析了诱导的最小间隙以及当层的长度增加时如何减小。给出了有限层和半无限层的状态轮廓局部密度的结果。

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