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Approach To A Superconductor-to-bose-insulator Transition In Disordered Films

机译:无序膜中超导体到绝缘体的转变方法

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摘要

Through a detailed study of scaling near the magnetic field-tuned superconductor-to-insulator transition in strongly disordered films, we find that results for a variety of materials can be collapsed onto a single phase diagram. The data display two clear branches, one with weak disorder and an intervening metallic phase, the other with strong disorder. Along the strongly disordered branch, the resistance at the critical point approaches R_Q=h/4e~2 and the scaling of the resistance is consistent with quantum percolation and, therefore, with the predictions of the dirty boson model.
机译:通过对强无序薄膜中磁场调谐的超导体至绝缘体过渡附近的结垢进行详细研究,我们发现各种材料的结果都可以折叠到单相图中。数据显示两个清晰的分支,一个分支具有弱无序性,中间有金属相,另一个分支具有强无序性。沿着强无序分支,临界点处的电阻接近R_Q = h / 4e〜2,并且电阻的缩放比例与量子渗滤一致,因此与脏玻色子模型的预测一致。

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