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Hole transport in polyfluorene-based sandwich-type devices: Quantitative analysis of the role of energetic disorder

机译:聚芴类夹心型器件中的空穴传输:高能障碍作用的定量分析

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The current density versus voltage [J(V)] curves of hole-only sandwich-type devices containing a blue-emitting polyfluorene-based copolymer were measured for a wide range of temperatures and for several thicknesses of the active organic layer. We show that the J(V) curves cannot be accurately described using a commonly used model within which the mobility depends only on the electric field, but that a consistent and quantitatively precise description of all curves can be obtained using the recently introduced extended Gaussian disorder model (EGDM). Within the EGDM, the mobility depends on the electric field and on the carrier concentration. Two physically interpretable parameters, viz. the width of the density of states, σ, and the density of transport sites, N_t, determine the shape of the curves. For the semiconductor studied, we find σ =0.13 ± 0.01 eV and N_t= (6 ± 1) × 10~(26) m~(-3). Consistent with the EGDM, the logarithm of the mobility in the low carrier concentration and low-field limit is found to show a 1/T~2 temperature dependence. It is shown that analyses which neglect the carrier-concentration dependence of the mobility yield an apparent 1 / T temperature dependence, as reported for many different materials, and that the incorrectness of such an approach would readily follow from a study of the layer thickness dependence of the mobility.
机译:在很宽的温度范围和几种厚度的活性有机层上,测量了包含发蓝色光的聚芴类共聚物的仅空穴夹心型器件的电流密度与电压[J(V)]曲线。我们表明,使用迁移率仅取决于电场的常用模型无法精确描述J(V)曲线,但是可以使用最近引入的扩展高斯无序获得所有曲线的一致且定量精确的描述模型(EGDM)。在EGDM中,迁移率取决于电场和载流子浓度。两个物理上可解释的参数,即。状态密度的宽度σ和传输位点的密度N_t决定了曲线的形状。对于所研究的半导体,我们发现σ= 0.13±0.01 eV和N_t =(6±1)×10〜(26)m〜(-3)。与EGDM一致,在低载流子浓度和低电场极限下的迁移率对数显示出1 / T〜2温度依赖性。结果表明,忽略迁移率的载流子浓度依赖性的分析得出了明显的1 / T温度依赖性,正如许多不同材料所报道的那样,这种方法的不正确性很容易从层厚度依赖性的研究中得出。的流动性。

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