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首页> 外文期刊>Physical review. B, Condensed Matter And Materials Physics >Electrodeposited epitaxial Fe_(100-x)Co_x films on n-GaAs (100)
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Electrodeposited epitaxial Fe_(100-x)Co_x films on n-GaAs (100)

机译：在n-GaAs（100）上电沉积外延Fe_（100-x）Co_x膜

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摘要

The electrodeposition of epitaxial cube-on-cube Fe_(100-x)Co_x films onto (100)-oriented n-GaAs from ferrous ammonium sulfate solutions containing various concentrations of cobalt sulfate is described. The cobalt composition in a series of 400-nm-thick films was found to vary in proportion to the concentration of cobalt sulfate in the electrolyte and six compositions in the range from 0 to 74% were deposited. Epitaxial (100)-oriented bcc films were produced throughout this range, as suggested by symmetrical x-ray diffraction and confirmed by x-ray pole figure measurements. Rocking curve measurements yielded data that could be fitted to the sum of a Lorentzian and a Gaussian, corresponding to the (200) Fe_(100-x)Co_x planes and to a residual contribution from GaAs (400), respectively. The full width at half maximum obtained for the film Lorentzians varied from 0.44° to 0.90° and was apparently uncorrelated with composition. X-ray (211) pole figure measurements revealed a high degree of twinning of the (100) bcc Fe_(100-x)Co_x consistent with a recent study of Fe films electrodeposited on n-GaAs.
机译：描述了从含有各种浓度的硫酸钴的硫酸亚铁铵溶液中，将外延立方立方Fe_（100-x）Co_x薄膜电沉积到（100）取向的n-GaAs上。发现一系列400nm厚的膜中的钴组成与电解质中硫酸钴的浓度成比例地变化，并且沉积了0至74％范围内的六种组成。如对称X射线衍射所建议并通过X射线极图测量所证实的，在此范围内均生产了外延（100）取向的bcc膜。摇摆曲线测量产生的数据可以拟合为洛伦兹和高斯的总和，分别对应于（200）Fe_（100-x）Co_x平面和GaAs（400）的残余贡献。洛伦兹薄膜获得的半峰全宽在0.44°至0.90°之间变化，显然与组成无关。 X射线（211）极图测量显示（100）bcc Fe_（100-x）Co_x的高度孪生，与最近在n-GaAs上电沉积Fe膜的研究一致。

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