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100 EPITAXIAL GROWTH OF A HIGH QUALITY MAGNESIUM OXIDE FILM USING A CUBIC SILICON CARBIDE BUFFER LAYER ON A SILICON 100 SUBSTRATE
100 EPITAXIAL GROWTH OF A HIGH QUALITY MAGNESIUM OXIDE FILM USING A CUBIC SILICON CARBIDE BUFFER LAYER ON A SILICON 100 SUBSTRATE
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机译：在硅100基质上使用立方碳化硅缓冲层制备高质量氧化镁膜的100表观生长
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摘要
PURPOSE: A method for growing an excellent magnesium oxide layer on a silicon (100) substrate by using a cubiform silicon carbide buffer layer is provided to stack magnesium oxide as a good-quality single crystalline layer in a direction of (100), by depositing the magnesium oxide layer after the cubiform silicon carbide buffer layer is formed on the silicon (100) substrate or a silicon (100) substrate which is deviated a little to a direction of (110). CONSTITUTION: After the cubiform silicon carbide buffer layer is grown on a silicon substrate, the magnesium oxide layer is deposited on the cubiform silicon carbide buffer layer. A silicon (100) surface which is cut at an angle of 4 and 6 degrees in the direction of (110) is used as the silicon substrate.
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