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首页> 外文期刊>Physical review. B, Condensed Matter And Materials Physics >Clustering of vacancy defects in high-purity semi-insulating SiC
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Clustering of vacancy defects in high-purity semi-insulating SiC

机译：高纯半绝缘碳化硅中空位缺陷的聚集

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摘要

Positron lifetime spectroscopy was used to study native vacancy defects in semi-insulating silicon carbide. The material is shown to contain (ⅰ) vacancy clusters consisting of four to five missing atoms and (ⅱ) Si-vacancy-related negatively charged defects. The total open volume bound to the clusters anticorrelates with the electrical resistivity in both as-grown and annealed materials. Our results suggest that Si-vacancy-related complexes electrically compensate the as-grown material, but migrate to increase the size of the clusters during annealing, leading to loss of resistivity.
机译：正电子寿命谱用于研究半绝缘碳化硅中的原始空位缺陷。所显示的材料包含（ⅰ）由四到五个缺失原子组成的空位簇和（ⅱ）与硅空位相关的带负电的缺陷。束缚在团簇上的总开放体积与生长和退火材料中的电阻率均不相关。我们的结果表明，硅空位相关的络合物在电学上补偿了所生长的材料，但在退火过程中迁移以增加簇的尺寸，从而导致电阻率损失。

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