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首页> 外文期刊>Physical review. B, Condensed Matter And Materials Physics >Capacitance-voltage characteristics of organic light-emitting diodes varying the cathode metal: Implications for interfacial states
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Capacitance-voltage characteristics of organic light-emitting diodes varying the cathode metal: Implications for interfacial states

机译：改变阴极金属的有机发光二极管的电容电压特性：对界面态的影响

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摘要

Capacitance-voltage (C-V) characteristics of organic light-emitting diodes based on a polyphenylene-vinylene have been measured by means of impedance spectroscopy. The effect of the metallic cathode (Au, Ag, Al, Mg, and Ba) was analyzed in the low-frequency region (2 Hz) of the capacitive response. The C-V curves collapse into a single pattern in the low bias region, and exhibit a dependence on the cathode work function showing a crossover from positive to negative (inductive) values. The voltage corresponding to the onset of the inductive behavior shifts toward higher bias as the cathode work function increases. Simulations based on an electron-injection model result in agreement with the observed C-V characteristics. From the comparison between the predicted and the experimentally observed data an estimation of the energetics of the metal-organic interface could be given. First, an interfacial state located ～0.2 eV above the metal Fermi level appears independently of the metallic cathode. Second, the existence of a dipole layer with interface slope S = -0.43 is deduced which enhances relatively the electron injection for large work function metals. In the case of a Ba cathode, the electron barrier determining carrier injection is due to the interface states.
机译：已经通过阻抗光谱法测量了基于聚苯撑-亚乙烯基的有机发光二极管的电容-电压（C-V）特性。在电容响应的低频区域（2 Hz）中分析了金属阴极（Au，Ag，Al，Mg和Ba）的影响。 C-V曲线在低偏置区域折叠为单个图形，并且表现出对阴极功函数的依赖性，该函数表示从正值到负（感性）值的交叉。随着阴极功函数的增加，与感应行为的开始相对应的电压向更高的偏置方向偏移。基于电子注入模型的仿真结果与观察到的C-V特性一致。从预测的数据和实验观察到的数据之间的比较，可以给出金属-有机界面的能量学估计。首先，在金属费米能级以上〜0.2 eV处出现界面状态，而与金属阴极无关。其次，推导了界面坡度S = -0.43的偶极层的存在，这相对增强了大功函数金属的电子注入。在钡阴极的情况下，电子势垒决定了载流子注入是由于界面状态。

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